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ZnO NANOPARTICLES AND THEIR APPLICATIONS – NEW ACHIEVMENTS
Nohavica, Dušan ; Gladkov, Petar
The advantages of ZnO are a low price, good gas sensing properties, photocatalytic activity, antibacterial activity, possibility to prepare structures with interesting optical properties, like photonic crystals, catalytic materials etc. In our laboratory the special research type of MOCVD apparatus has been developed. In the study we have investigated the influence of the growth rate on the morphology of ZnO deposited on Si (100), GaP (111) as well as nanoporous GaP. The same apparatus has been used for ZnO nanoparticles preparation with the diameter of individual nanoparticles of about 25 nm.
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Asymetrie krystalografických pórů v polovodičích A.sup.3./sup. B.sup.5./sup
Nohavica, Dušan ; Gladkov, Petar ; Jarchovský, Zdeněk
In the contribution the crucial influence of the (011) planes nonequivalence on pores formation in InP and some other A.sup.3./sup. B.sup.5./sup. semiconductors is demonstrated. In plane (01-1) are three different, crystallographically oriented (CO) sets of pores with three different orientations. In the perpendicular plane (011) triangular crossing points are observable. Heat treatment of the InP plates containing pores produce spherical figures which we have used to decrease the dislocation density in epitaxial layers by mechanism of the ELO.
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Tvorba mikro a nanoporů v polovodičích A.sup.3./sup. B.sup.5./sup
Nohavica, Dušan ; Gladkov, Petar ; Zelinka, Jiří ; Dvořák, Martin ; Pirov, J.
Electrochemically etched pores are accessible also in A.sup.3./sup. B.sup.5./sup. semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences.
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Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs
Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel
Growth of the Ga.sub.x./sub.In.sub.1-x./sub.P/GaAs(100) heterostructures from the liquid phase was optimized at 800.sup.o./sup.C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects has been suggested.
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