Original title: Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures
Authors: Nohavica, Dušan ; Grym, Jan ; Gladkov, Petar ; Hulicius, Eduard ; Pangrác, Jiří
Document type: Papers
Conference/Event: NANOCON 2011. International Conference /3./, Brno (CZ), 2011-09-21 / 2011-09-23
Year: 2011
Language: eng
Abstract: We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ºC and GaAs pores at 700-850ºC converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates
Keywords: electrochemical etching of metals; heterotransitions; porous semiconductors
Project no.: CEZ:AV0Z20670512 (CEP), CEZ:AV0Z10100521 (CEP), GAP108/10/0253 (CEP)
Funding provider: GA ČR
Host item entry: NANOCON 2011, Conference Proceedings, 3 rd International Conference, ISBN 978-80-87294-27-7

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0216241

Permalink: http://www.nusl.cz/ntk/nusl-96331


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers