Original title: LOW SUPERSATURATION OVERGROWTH OF NANOPOROUS GaAs SUBSTRATES
Authors: Nohavica, Dušan ; Grym, Jan ; Gladkov, Petar ; Hamplová, Marie
Document type: Papers
Conference/Event: NANOCON 2012. International Conference /4./, Brno (CZ), 2012-10-23 / 2012-10-25
Year: 2012
Language: eng
Abstract: Oriented pore networks in GaAs were created by electrochemical dissolution. Low supersaturation overgrowth of the porous substrates by InxGa1-xAs (x<4%) was realized by Liquid Phase Epitaxy (LPE)
Keywords: Electrochemical etching; Pores conversion; Porous III-V semiconductors
Project no.: GAP108/10/0253 (CEP)
Funding provider: GA ČR
Host item entry: NANOCON 2012, 4th International Conference Proceedings, ISBN 978-80-87294-32-1

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0216684

Permalink: http://www.nusl.cz/ntk/nusl-136094


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers