Original title: EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs
Authors: Nohavica, Dušan ; Grym, Jan ; Hulicius, Eduard ; Pangrác, Jiří ; Gladkov, Petar ; Jarchovský, Zdeněk
Document type: Papers
Conference/Event: NANOCON 2010. International Conference /2./, Olomouc (CZ), 2010-10-12 / 2010-10-14
Year: 2010
Language: eng
Abstract: Structural and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650oC and GaAs pores at 750-850oC converted them into microcavities The capability of improved structural quality homo- and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs and GaInAs on GaAs by MOVPE technology.
Keywords: A3B5; heteroepitaxy; micropores
Project no.: CEZ:AV0Z20670512 (CEP), CEZ:AV0Z10100521 (CEP)
Host item entry: CONFERENCE PROCEEDINGS NANOCON 2010, ISBN 978-80-87294-19-2

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0194679

Permalink: http://www.nusl.cz/ntk/nusl-85965


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers