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Parameter Optimization of Multi-Level Diffraction Gratings
Matějka, Milan ; Kolařík, Vladimír ; Horáček, Miroslav ; Král, Stanislav
Originally, the e-beam lithography (EBL) is a technique for creating high-resolution black and white masks for the optical lithography. Multi-level relief structures can be also prepared using EBL patterning. Their preparation is based on the image patterning with a gradient of exposure doses. Large-area multi-level structures can be effectively prepared using the electron beam pattern generator with a variable shaped beam. We present several writing strategies. Basically, the main writing strategy uses one stamp (i.e. one elementary exposure of the shaped electron beam) per one elementary area with the same exposure dose. This simple approach is fast and flexible, however it does not guarantee optimal results. The main problem is an imperfection of the stamps (size, shape, and homogeneity). Advanced algorithms are based on multiple\nexposure of the same elementary area, the total local exposure dose is a sum of several different elementary exposures (stamps). Using these algorithms, a smoother surface of the structure can be achieved. On the other hand, the writing speed is considerably decreased. Tradeoff between the achieved parameters and the writing speed is discussed for selected set of writing strategy algorithms.
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E-beam pattern generator BS600 and technology zoom
Kolařík, Vladimír ; Horáček, Miroslav ; Matějka, František ; Matějka, Milan ; Urbánek, Michal ; Krátký, Stanislav ; Král, Stanislav ; Bok, Jan
This contribution deals with an electron beam pattern generator (ELG) working with a rectangular shape variable size electron beam originally developed at Institute of Scientific Instruments (ISI), later on commercialized as a BS600 series by former company Tesla, and recently upgraded by ISI cooperating with several partners. The key issue of this paper is a recently developed exposure mode which is called Technology Zoom (TZ mode) since its original concept until the recent progress. This ELG operating in the TZ mode provides three main advantages when compared to the standard exposure mode: higher exposure speed due to increased beam current density; finer stamp size adjustment and sharper stamp shape due to the stronger size reduction of the shaping aperture. Further, we discussed also some drawbacks and practical issues of the TZ mode. And finally, we summarize some results on real exposure examples. The new exposure mode (together with other recent upgrades) makes the BS600 pattern generator very useful for the nanotechnology patterning tasks and challenges.
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Variable-shape E-beam litography: Proximity effect simulation of 3D micro and nano sructures
Matějka, Milan ; Urbánek, M. ; Kolařík, V. ; Horáček, M. ; Krátký, Stanislav ; Mikšík, P. ; Vašina, J.
A proximity effect simulation technique and developed resist profile simulation for variable-shaped e-beam lithography of three dimensional structures are presented. The e-beam lithography is a technology process which allows high resolution patterning. Most frequently it is used for microfabrication or nanofabrication of two dimensional relief structures such as resist photo masks, etching masks, diffraction gratings, micro and nano optics, photonics and more. However, in the case of the 3D structures patterning the precise thickness control of developed resist is required. With regard to subsequent proximity effect correction, the proximity effect simulation and developed resist profile simulation models are in the case of 3D structures fabrication critically important. We show the results from simulation of exposure and resist development process for the chosen polymer resist (PMMA), using the patterning and simulation e-beam lithography software.
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Shaped E-beam nanopatterning with proximity effect correction
Urbánek, Michal ; Kolařík, Vladimír ; Matějka, Milan ; Matějka, František ; Bok, Jan ; Mikšík, P. ; Vašina, J.
Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximity effect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and exposed patterns without PEC were compared. Finally, we compared the testing structures with PEC and without PEC, and we showed that the PEC tool works reliably for the e-beam writer BS 600.
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Calibration specimens for microscopy
Kolařík, Vladimír ; Matějka, Milan ; Matějka, František ; Krátký, Stanislav ; Urbánek, Michal ; Horáček, Miroslav ; Král, Stanislav ; Bok, Jan
Recent developments in nanotechnologies raised new issues in microscopy with nanometer and sub nanometer resolution. Together with the imaging techniques, new approaches in the metrology field are required both in the direct metrology issues and in the area of calibration of the imaging tools (microscopes). Scanning electron microscopy needs the calibration specimens for adjusting the size of the view field (correct magnification) and the shape of that field (correction of deflection field distortions). Calibration specimens have been prepared using different technologies; among them the e–beam patterning and the e–beam lithography have been proved to be appropriate and flexible tool for that task. In the past, we have reported several times our achievements in this field (e.g. [1]). Nevertheless, recent advances of the patterning tool (BS600), mainly the development of the technology zoomed exposure mode [2] and the installation of the magnetic field active cancellation system [3], pushed remarkably the technology necessary for further advances in this area. Within this contribution some theoretical, technology and practical aspects are discussed; achieved results are presented.
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Analysis of electron current instability in E-beam writer
Bok, Jan ; Horáček, Miroslav ; Král, Stanislav ; Kolařík, Vladimír ; Matějka, František
The electron beam writer Tesla BS600 works with a thermal-field electron emitter, fixed electron energy of 15 keV and a rectangular shaped variable-size electron beam. The size of the shaped beam (stamp) can be set from 50 to 6300 nm in standard mode and from 16 to 2100 nm in high-resolution mode. The basic increment of the stamp size is 50 nm, resp. 16 nm. Electron current density inhomogeneity and long-term instability in stamps can have negative impact on the exposure quality. Therefore, we focused on a study of the current time instability. The current density in variously sized stamps was measured by a picoammeter and a PIN diode video channel as a function of time. We analyzed short-term and long-term current instabilities using filtering techniques, as well as the Fourier analysis. Based on the results, we could be able to find reasons of the current instabilities and to propose improvements to achieve higher exposure quality.
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Proximity effect simulation for variable shape e-beam writer
Kolařík, Vladimír ; Matějka, Milan ; Urbánek, Michal ; Král, Stanislav ; Krátký, Stanislav ; Mikšík, P. ; Vašina, J.
Electron Beam Writer (EBW) is a lithographic tool allowing generation of patterns in high resolution. The writing is carried out into a layer of a sensitive material (resist), which is deposited on the substrate surface (e.g. silicon). The resolution of the EBW is limited not only by the beam spot size, but also by the electron scattering effects (forward scattering, backscattering). Thus, even if the beam spot size on the resist surface is very small, due to electron scattering effect in the resist, the exposed area is significantly broader than the original beam spot size [1, 2].
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Measurements of current density distribution in e-beam writer
Bok, Jan ; Kolařík, Vladimír
An e-beam writer with a variable shaped beam needs a bright and stable source of electrons but also a homogeneous square beam segment. This is the starting element out oif wich smaller rectangular-shaped variable-sized patterns are selected (stamps). Current inhomogeneity of the starting element would cause and different current density of various stamps that negatively impacts the exposure quality. This problem implies the necessity of analysing and monitoring the current density distribution in the staring beam element.
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Scanning Probe Microscopy: Measuring on Hard Surfaces
Matějka, Milan ; Urbánek, Michal ; Kolařík, Vladimír
During a measurement by scanning probe microscopy (SPM) an image artifacts can appear in a measurement data. The source of image artifacts during an SPM measurement could be in parts of the SPM tool: mechanical system, piezoelectric crystal, scanner electronic. However, the main source of image artifact is the probe tip geometry and properties of the sample. For example, probe wearing, which occurs during the contact measurement on a sample with a hard surface, could result in heavy probe shape change, causing probe-related image artifacts. Measurement could appear problematic on a sample with periodical relief structure (e.g. gratings with sub 10 μm periodicity) prepared in hard materials (e.g. silicon), when the structure height is greater than about 500 nm. In this case, probe can easily get struck during the scanning, on the hard surface as well as at the high aspect ratio relief structure, causing image artifact thus reducing measurement quality.
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SPM Nanoscratching in the Sub 100 nm Resolution
Urbánek, Michal ; Kolařík, Vladimír ; Matějka, Milan
Scanning probe microscopy (SPM) is tool basically used for surface characterization. Besides that, it offers several lithographic methods (e.g. nanoscratching) to prepare structures in the sub 100 nm resolution. The nanoscratching using SPM offers a method for patterning of surface with a very high resolution based on near field interaction. By this method some tiny marks or taggants could be prepared. Therefore we used the SPM nanoscratching for preparation of nanostructures in thin soft polymer films by various tips. Nanoscratching regime of SPM is possible to operate in contact and close contact modes. In the contact mode we prepared an array of stamps with a variable size, where dimensions and depth dependency on number of pixels were inspected. For writing of these structures we used polymer films with different softness (e.g. PMMA, SU-8) and various values of setpoint, which are responsible for structures deepness.
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