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Testing of the new UHV scanning electron microscope and design of its effusion cel
Šárközi, Rudolf ; Mach, Jindřich (referee) ; Bábor, Petr (advisor)
This work focus on the development and the design of the effusion cell that is able to deposit different materials in downward orientation. The Cell itself should be placed into the ultra-vacuum microscope (UHV-SEM) developed in TESCAN company in the collaboration with Institute of Physical Engineering. Theoretical part is devoted to the description of the electron microscope and its, in the future installed, parts, which will be used for the preparation and the analysis of the nanostructures. In this work, the first measurements with the electron microscope are presented, and the influence of mechanical vibrations to image quality is discussed.
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Determination of drift distortion in SEM micrographs acquired at different magnifications and acquisition times
Petráňová, Veronika ; Koudelka_ml., Petr ; Valach, Jaroslav
In the experimental mechanics wide variety of optical methods including measurement of deformation at reduced length scales using combination of computer vision and scanning electron microscopy (SEM) have been recently applied. One of suitable methods for in-plane measurement of displacements and deformations in the micrographs obtained by SEM is the 2D digital image correlation. In contrast to images obtained in visible spectrum by classical optical devices temporally-varying distortions known as drift distortion are present in the SEM micrographs. These distortions are caused by positional errors of electron beam during scanning process. Magnitude of this effect decreases with higher conductivity of the sample and is also influenced by magnification and scanning time. For this purpose measurement of distortion was performed on a series of micrographs of conductive samples acquired at different magnifications and acquisition times. Surface of each sample was covered with liquid silver to ensure adequate contrast pattern necessary for determination of distortion’s magnitude and distortion magnitudes were assessed.
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The pseudoelasticity and the shape memory effect in CoNiAl alloys
Kopeček, Jaromír ; Jarošová, Markéta ; Jurek, Karel ; Heczko, Oleg
The cobalt alloys (close to the CoNiAl stoichiometry) are the less known shape memory alloys. Such behavior is consequence of the martensitic transformation. The pseudoelasticity is caused by the stress-induced martensitic transformation above the equilibrium martensite start temperature from high temperature cubic phase (austenite) to lower symmetry phase(martensite). In CoNiAl the pseudoelastic behavior can be obtained by the high temperature annealing. In presented work the effect of the annealing temperature on both pseudoelastic behavior and microstructure was investigated.
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Calibration specimens for microscopy
Kolařík, Vladimír ; Matějka, Milan ; Matějka, František ; Krátký, Stanislav ; Urbánek, Michal ; Horáček, Miroslav ; Král, Stanislav ; Bok, Jan
Recent developments in nanotechnologies raised new issues in microscopy with nanometer and sub nanometer resolution. Together with the imaging techniques, new approaches in the metrology field are required both in the direct metrology issues and in the area of calibration of the imaging tools (microscopes). Scanning electron microscopy needs the calibration specimens for adjusting the size of the view field (correct magnification) and the shape of that field (correction of deflection field distortions). Calibration specimens have been prepared using different technologies; among them the e–beam patterning and the e–beam lithography have been proved to be appropriate and flexible tool for that task. In the past, we have reported several times our achievements in this field (e.g. [1]). Nevertheless, recent advances of the patterning tool (BS600), mainly the development of the technology zoomed exposure mode [2] and the installation of the magnetic field active cancellation system [3], pushed remarkably the technology necessary for further advances in this area. Within this contribution some theoretical, technology and practical aspects are discussed; achieved results are presented.
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Structuring of diamond films by reactive ion plasma etching
Domonkos, M. ; Ižák, Tibor ; Proška, J. ; Kromka, Alexander
In this study, two common strategies of diamond film structuring are described. Main focus is on the comparison of top-down and the bottom-up strategies. The top-down strategy is primary related to dry reactive ion etching through masking materials (or even without mask), while bottom-up strategy is based on selective area deposition of diamond film. Several methods of both strategies are demonstrated in details in the article, regarding to their properties and basic principles.
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Surface crystallinity at the sight of electrons
Frank, Luděk ; Mikmeková, Šárka ; Mika, Filip ; Müllerová, Ilona
Scattering of electrons, injected into solids in order to produce an electron optical image of their surfaces, is governed by inner potentional of the sample with its spatial distribution inherent to the target structure. Except truly amorphous materials of the spatial arrangement range shorter than the interaction volume of electrons, we meet anisotropic scattering with the resulting image signal responding to the local crystalline structure. Incident electrons undergo scattering events the number of wich depends on their energy and on the scattering cross section of the material and the final emitted current results from statistics of these events.
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Scanning Very Low Energy Electron Microscopy
Müllerová, Ilona ; Hovorka, Miloš ; Mikmeková, Šárka ; Pokorná, Zuzana ; Mikmeková, Eliška ; Frank, Luděk
Recent developments in applications of the scanning very low energy electron microscopy in selected branches of materials science are reviewed. The examples include visualization of grains in conductive polycrystals including ultrafine grained metals, identification of the local crystal orientation upon reflectance of very slow electrons, transmission mode with ultrathin free-standing films including graphene, acquisition of a quantitative dopant contrast in semiconductors, and examination of thin surface coverages.
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