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Controlled structuring of self-assembled polystyrene microsphere arrays by two different plasma systems
Domonkos, Mária ; Ižák, Tibor ; Stolcova, L. ; Proška, J. ; Kromka, Alexander
In this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres (PM) with diameter of 471 nm was used as the primary template. The PM templates were processed in two different RIE systems: (i) capacitively coupled radiofrequency plasma (CCP) and (ii) dual plasma system which combines CCP and pulsed linear-antenna microwave plasma (PLAMWP). The influence of process conditions on the PM geometry was systematically studied by scanning electron microscopy (SEM). It was found out that choosing optimal parameters results in a tunable diameter of PM with various shapes (from spheres to pyramid-like structures) while keeping their periodic hexagonal ordering.
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Controlled structuring of self–assembled polystyrene microsphere arrays by two different plasma systems
Domonkos, Mária ; Ižák, Tibor ; Štolcová, L. ; Proška, J. ; Kromka, Alexander
In this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres (PM) with diameter of 471 nm was used as the primary template. The PM templates were processed in two different RIE systems: (i) capacitively coupled radiofrequency plasma (CCP) and (ii) dual plasma system which combines CCP and pulsed linear-antenna microwave plasma (PLAMWP). The influence of process conditions on the PM geometry was systematically studied by scanning electron microscopy (SEM). The process conditions were controlled by varying radiofrequency (RF) power, gas mixture (O2:CF4 ratio) and process duration.
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Reactive ion etching of polystyrene microspheres
Domonkos, Mária ; Ižák, Tibor ; Štolcová, L. ; Proška, J. ; Kromka, Alexander
This article gives a brief insight also into the principle of the nanosphere lithography and various plasma systems focusing on their properties and applicability for a subsequent topographical modification of surfaces prepared by NS lithography. In the experimental part of this study we present a successful manipulation of microspheres by reactive ion etching (RIE). A self-assembled monolayer close-packed array of monodisperse polystyrene microspheres is used as the primary template. The polystyrene microspheres (PM) were processed in capacitively coupled radiofrequency plasma (CCP) RIE system. The influence of process conditions on the PM geometry is systematically studied by scanning electron microscopy. The process conditions are controlled by varying radiofrequency power, total pressure, composition of the gas mixture (ratio O2:CF4) and process duration.
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Structuring of diamond films by reactive ion plasma etching
Domonkos, M. ; Ižák, Tibor ; Proška, J. ; Kromka, Alexander
In this study, two common strategies of diamond film structuring are described. Main focus is on the comparison of top-down and the bottom-up strategies. The top-down strategy is primary related to dry reactive ion etching through masking materials (or even without mask), while bottom-up strategy is based on selective area deposition of diamond film. Several methods of both strategies are demonstrated in details in the article, regarding to their properties and basic principles.
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Study of layers of Pd on InP
Černohorský, Ondřej ; Žďánský, Karel ; Proška, J.
Pd nanoparticles were prepared in colloid solution stabilized by AOT. The layers were prepared by electrophoretic deposition through the mask of polystyrene spheres. SEM measurement showed that particles in colloid solution are separated and after deposition they form small aggregates on InP. The size of these aggregates depends on the time of deposition. I-V characteristics were measured and then Schottky barrier height and ideality factor were calculated. The morphology of layers was monitored by SEM.
Plný tet: UFE 0374575 -  PDF
Plný text: content.csg - PDF
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