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Profiling of N-Type Dopants in Silicon Based Structures
Hovorka, Miloš ; Mika, Filip ; Frank, Luděk ; Mikulík, P.
We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM and PEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter.
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Detekce signálu v rastrovacím elektronovém mikroskopu pomocí detektorů sekundárních elektronů
Konvalina, Ivo ; Hovorka, Miloš ; Dvořáková, Marie ; Müllerová, Ilona
The collection of secondary electrons (SE) was studied for microscopes where the magnetic field penetrates to the specimen surface and for the arrangement with the specimen region free of magnetic field. Collection efficiency of secondary electron detectors varies with their energy and angular sensitivity connected with electrostatic and magnetic field distribution in the specimen region which influences the contrast of SE images. The trajectories of SE with regard to their energy, angular distributions are simulated and secondary electron detectors compared on the basis of calculated collection efficiency. For the verification of the simulated data the standard resolution-testing specimen with Au particles on a carbon substrate was used.
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Detekční strategie pro sběr sekundárních elektronů v REM
Konvalina, Ivo ; Hovorka, Miloš ; Wandrol, Petr ; Mika, Filip ; Müllerová, Ilona
In the scanning electron microscope (SEM), the secondary electrons (SE) are usually detected by the Everhart-Thornley (ET) type detector, using a weak electrostatic field to attract low energy SE let us call it the standard system. This principle is employed for more than forty years. Modern SEMs achieve their improved image resolution by allowing the strong magnetic field of the objective lens (OL) to penetrate to the specimen surface (so called immersion system). Two SE detectors are usually used in this case: one is below the OL just as the standard ET detector (lower detector) and the other is positioned above the OL (upper detector). The final contrast of SE images for the same specimen varies with the energy and angular sensitivity of the detectors, connected with specific distributions of the electrostatic and magnetic fields in the specimen region.
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