Original title: Profiling of N-Type Dopants in Silicon Based Structures
Authors: Hovorka, Miloš ; Mika, Filip ; Frank, Luděk ; Mikulík, P.
Document type: Papers
Conference/Event: CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./, Brno (CZ), 2009-08-10 / 2009-08-14
Year: 2009
Language: eng
Abstract: We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM and PEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter.
Keywords: doping levels; n-type substrate; PEEM; SEM
Project no.: CEZ:AV0Z20650511 (CEP), GP102/09/P543 (CEP), IAA100650803 (CEP)
Funding provider: GA ČR, GA AV ČR
Host item entry: Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09), ISBN 978-80-254-4535-8

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0179799

Permalink: http://www.nusl.cz/ntk/nusl-40965


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers