Název: Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Autoři: Stuchlík, Jiří ; Fajgar, Radek ; Kupčík, Jaroslav ; Remeš, Zdeněk ; Stuchlíková, The-Ha
Typ dokumentu: Příspěvky z konference
Konference/Akce: NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./, Brno (CZ), 20171018
Rok: 2018
Jazyk: eng
Abstrakt: Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
Klíčová slova: a-Si:H diode structures; Ge; nanoparticles; PECVD
Číslo projektu: KONNECT-007, LTC17029
Poskytovatel projektu: AV ČR, GA MŠk
Zdrojový dokument: Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application, ISBN 9788087294819

Instituce: Fyzikální ústav AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: http://hdl.handle.net/11104/0289330

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-389936


Záznam je zařazen do těchto sbírek:
Věda a výzkum > AV ČR > Fyzikální ústav
Konferenční materiály > Příspěvky z konference