Original title: Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Authors: Stuchlík, Jiří ; Fajgar, Radek ; Kupčík, Jaroslav ; Remeš, Zdeněk ; Stuchlíková, The-Ha
Document type: Papers
Conference/Event: NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./, Brno (CZ), 20171018
Year: 2018
Language: eng
Abstract: Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
Keywords: a-Si:H diode structures; Ge; nanoparticles; PECVD
Project no.: KONNECT-007, LTC17029
Funding provider: AV ČR, GA MŠk
Host item entry: Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application, ISBN 9788087294819

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0289330

Permalink: http://www.nusl.cz/ntk/nusl-389936

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Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
 Record created 2018-11-26, last modified 2019-10-20

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