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Testing specimens for SEM
Kolařík, Vladimír ; Matějka, Milan ; Urbánek, Michal ; Krátký, Stanislav ; Chlumská, Jana ; Horáček, Miroslav ; Král, Stanislav
Research and development in the field of relief testing structures on Silicon wafer. The specimen is to be used for testing of metrics (dimensions and orthogonality) of scanning electron microscopes (SEM) as well as for the calibration of the SEM view of field. A set of samples is prepared on a Silicon wafer by means of electron-beam lithography and related techniques. The specimens are individually finalized. Related research and development in the field of accuracy assessment and control as well as tolerance measurements in the micron domain; Calibration Certificate.
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SMV-2013-01: Relief structures based on diffractive optics
Horáček, Miroslav ; Kolařík, Vladimír ; Matějka, Milan ; Urbánek, Michal ; Krátký, Stanislav ; Chlumská, Jana ; Král, Stanislav
Research and development in the field of physical realization of graphic and optical structures based on the principle of diffractive optics by means of electron beam lithography in a recording material supported by a silicon or glass board. The research covers the analysis of the graphical or optical motive, research and application of relief structures implementing the required graphic and optical properties, research and modeling of the physical possibilities of implementation of relief structures, preparation and analysis of technology of implementation of relief structures with regard to the limits of current scientific instruments, verification of theoretical considerations by means of relief structure sample exposure.
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E-beam pattern generator BS600 and technology zoom
Kolařík, Vladimír ; Horáček, Miroslav ; Matějka, František ; Matějka, Milan ; Urbánek, Michal ; Krátký, Stanislav ; Král, Stanislav ; Bok, Jan
This contribution deals with an electron beam pattern generator (ELG) working with a rectangular shape variable size electron beam originally developed at Institute of Scientific Instruments (ISI), later on commercialized as a BS600 series by former company Tesla, and recently upgraded by ISI cooperating with several partners. The key issue of this paper is a recently developed exposure mode which is called Technology Zoom (TZ mode) since its original concept until the recent progress. This ELG operating in the TZ mode provides three main advantages when compared to the standard exposure mode: higher exposure speed due to increased beam current density; finer stamp size adjustment and sharper stamp shape due to the stronger size reduction of the shaping aperture. Further, we discussed also some drawbacks and practical issues of the TZ mode. And finally, we summarize some results on real exposure examples. The new exposure mode (together with other recent upgrades) makes the BS600 pattern generator very useful for the nanotechnology patterning tasks and challenges.
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Calibration specimens for microscopy
Kolařík, Vladimír ; Matějka, Milan ; Matějka, František ; Krátký, Stanislav ; Urbánek, Michal ; Horáček, Miroslav ; Král, Stanislav ; Bok, Jan
Recent developments in nanotechnologies raised new issues in microscopy with nanometer and sub nanometer resolution. Together with the imaging techniques, new approaches in the metrology field are required both in the direct metrology issues and in the area of calibration of the imaging tools (microscopes). Scanning electron microscopy needs the calibration specimens for adjusting the size of the view field (correct magnification) and the shape of that field (correction of deflection field distortions). Calibration specimens have been prepared using different technologies; among them the e–beam patterning and the e–beam lithography have been proved to be appropriate and flexible tool for that task. In the past, we have reported several times our achievements in this field (e.g. [1]). Nevertheless, recent advances of the patterning tool (BS600), mainly the development of the technology zoomed exposure mode [2] and the installation of the magnetic field active cancellation system [3], pushed remarkably the technology necessary for further advances in this area. Within this contribution some theoretical, technology and practical aspects are discussed; achieved results are presented.
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Analysis of electron current instability in E-beam writer
Bok, Jan ; Horáček, Miroslav ; Král, Stanislav ; Kolařík, Vladimír ; Matějka, František
The electron beam writer Tesla BS600 works with a thermal-field electron emitter, fixed electron energy of 15 keV and a rectangular shaped variable-size electron beam. The size of the shaped beam (stamp) can be set from 50 to 6300 nm in standard mode and from 16 to 2100 nm in high-resolution mode. The basic increment of the stamp size is 50 nm, resp. 16 nm. Electron current density inhomogeneity and long-term instability in stamps can have negative impact on the exposure quality. Therefore, we focused on a study of the current time instability. The current density in variously sized stamps was measured by a picoammeter and a PIN diode video channel as a function of time. We analyzed short-term and long-term current instabilities using filtering techniques, as well as the Fourier analysis. Based on the results, we could be able to find reasons of the current instabilities and to propose improvements to achieve higher exposure quality.
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Proximity effect simulation for variable shape e-beam writer
Kolařík, Vladimír ; Matějka, Milan ; Urbánek, Michal ; Král, Stanislav ; Krátký, Stanislav ; Mikšík, P. ; Vašina, J.
Electron Beam Writer (EBW) is a lithographic tool allowing generation of patterns in high resolution. The writing is carried out into a layer of a sensitive material (resist), which is deposited on the substrate surface (e.g. silicon). The resolution of the EBW is limited not only by the beam spot size, but also by the electron scattering effects (forward scattering, backscattering). Thus, even if the beam spot size on the resist surface is very small, due to electron scattering effect in the resist, the exposed area is significantly broader than the original beam spot size [1, 2].
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What is the buzz about the TZ mode
Kolařík, Vladimír ; Matějka, František ; Matějka, Milan ; Horáček, Miroslav ; Urbánek, Michal ; Bok, Jan ; Krátký, Stanislav ; Král, Stanislav ; Mika, Filip
This contribution deals with an e-beam pattern generator BS 600 that works with a variable rectangular spot of electrons (stamp). The TZ stands for the ‘technology zoom’; its meaning is a reduction of the spot size by a factor of 3. Original description of the TZ exposure mode can be found in (1), [2] and [3]; further aspects concerning the exposure system and its electron source were described in [4] and [5]; technology and related topics are discussed in [6], [7], [8] and [9]; overview of application areas is in [10], [11] and [12]; and finally, very recent results are summarized in [13], [14] and [15].
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