Národní úložiště šedé literatury Nalezeno 24 záznamů.  předchozí11 - 20další  přejít na záznam: Hledání trvalo 0.01 vteřin. 
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Stuchlík, Jiří ; Fajgar, Radek ; Kupčík, Jaroslav ; Remeš, Zdeněk ; Stuchlíková, The-Ha
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
The deposition of amorphous and amorphous hydrogenated silicon with embedded cubic Mg.sub.2./sub.Si nanoparticles
Stuchlíková, The-Ha ; Stuchlík, Jiří ; Remeš, Zdeněk ; Fajgar, Radek ; Galkin, N.G. ; Galkin, K.N. ; Chernev, I.M.
We study possibilities how to increase a by usage of magnesium silicide nanoparticles (Mg2Si-NPs) in structure of Si: H. In this paper we introduce two technics -combination of PECVD and Vacuum Evaporation (VE) and Reactive Laser Ablation (RLA) -for preparation of cubic structure of Mg2Si-NPs in amorphous (a-Si) or amorphous hydrogenated (a-Si: H) silicon matrix. Formation of Mg2Si-NPs was proved by Raman spectroscopy. Likewise we introduce optical changes measured at absorption edge and the first results on realized NIP structures.
The deposition of germanium nanoparticles on hydrogenated amorphous silicon
Stuchlík, Jiří ; Volodin, V.A. ; Shklyaev, A.A. ; Stuchlíková, The-Ha ; Ledinský, Martin ; Čermák, Jan ; Kupčík, Jaroslav ; Fajgar, Radek ; Mortet, Vincent ; More Chevalier, Joris ; Ashcheulov, Petr ; Purkrt, Adam ; Remeš, Zdeněk
We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 °C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.
Preparation of Magnesium Silicide from Recycled Materials for Energy Storage.
Bumba, Jakub ; Dytrych, Pavel ; Šolcová, Olga ; Koštejn, Martin ; Fajgar, Radek ; Maléterová, Ywetta ; Kaštánek, František
Recycling technologies help to save energy, materials and environment. This is the main reason of their popularity. The recovery of semiconductors and metals depends on recycling treatment. A new multi-step technology, which enables to obtain pure silicon and hydrogen from waste materials,is reported in this study. The only by-product is magnesium phosphate, which is a desired fertilizer. Magnesium silicide was successfully prepared from milled silicon photovoltaic (PV) panels and milled Mg obtained from the scrap. The formed magnesium silicide was then hydrolysed by phosphoric acid to form a mixture of silanes. Gaseous products (silanes) were separated by cooling below their boiling temperature by liquid nitrogen and then thermally decomposed by a hot wire, e.g. Pt.This treatment leads to pure silicon and hydrogen release. In this study a deep-in characterization by various methods spectroscopy, Scanning Electron Microscopy (SEM) with Energy Dispersive X- Ray spectroscopy (EDX), etc.) of prepared samples was also done to explain the individual influences, e.g. reaction temperature and atmosphere.
Plný tet: SKMBT_C22016111814301 - Stáhnout plný textPDF
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Excimer Laser-Induced CVD of Carbon Encapsulated Cobalt Nanoparticles
Fajgar, Radek ; Maryško, Miroslav ; Dřínek, Vladislav ; Kupčík, Jaroslav ; Šubrt, Jan
Decomposition of acetylene / Co(CO)(3)(NO)mixtures induced by excimer ArF laser pulses is an efficient technique for preparation of amorphous cobalt nanoparticles encapsulated in carbon. Vacuum heating up to 900 degrees C leads to crystallization the metal core. The cobalt core crystallizes in a face-centered cubic (beta) form as revealed by X-ray and electron diffraction techniques and carbon affords graphite outer part. Properties of the Co(core) - carbon(shell)nanocomposites were examined by spectroscopy and microscopy techniques. Magnetization studies revealed paramagnetic behavior of the as-prepared amorphous deposit and superparamagnetic behavior of the annealed samples.
Synthesis of Lead and Lead Oxide Nanoparticles for Inhalation Experiments
Moravec, Pavel ; Smolík, Jiří ; Ondráček, Jakub ; Vodička, Petr ; Fajgar, Radek
From the three tested methods of NP's generation the evaporation/condensation of metallic Pb seems to be the most suitable for long lasting inhalation experiments due to its simplicity, unambiguous mechanism of NP′s formation and well defined composition. Nevertheless, NP′s can change their composition, at least on the surface layer, during the time-lag between their formation and inhalation. Thermal decomposition of PbTHD2 can produce sufficiently high concentration of NP′s but there is some uncertainty about their composition due to presence of OC in NP′s. Oxidation of PbTHD2 produces carbon free NP′s, but the number concentration of NP′s is somewhat low.
Plný tet: SKMBT_C22013101814595 - Stáhnout plný textPDF
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