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Tvorba mikro a nanoporů v polovodičích A.sup.3./sup. B.sup.5./sup
Nohavica, Dušan ; Gladkov, Petar ; Zelinka, Jiří ; Dvořák, Martin ; Pirov, J.
Electrochemically etched pores are accessible also in A.sup.3./sup. B.sup.5./sup. semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences.
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Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs
Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel
Growth of the Ga.sub.x./sub.In.sub.1-x./sub.P/GaAs(100) heterostructures from the liquid phase was optimized at 800.sup.o./sup.C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects has been suggested.
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Pseudokepstrální analýza řeči
Vích, Robert
Real generalized cepstral analysis is introduced and applied to speech deconvolution and vocal tract modeling. Finite impulse response pseudo cepstral vocal tract models with linear and minimum phase are derived and applied to speech synthesis.
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Konverse hlasu založená na nelineární transformaci spektra
Vích, Robert ; Vondra, Martin
A new voice conversion algorithm is presented, which transforms the utterance of a source speaker into the utterance of a target speaker. The voice conversion algorithm is based on spectral speech analysis, nonlinear frequency transformation, spectral envelope warping, spectrum interpolation and cepstral speech synthesis. Prosodic transformations, i.e. fundamental frequency, time and intensity scale modifications are also shortly mentioned.
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