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	Informační obsah výtisku obrazu z REM Müllerová, Ilona ; Hutař, Otakar ; Zadražil, Martin ; Frank, Luděk Úplný záznam
	Measurement of the critical energy in the SEM equipped with the cathode lens Zobačová, Jitka ; Müllerová, Ilona ; Hutař, Otakar ; Frank, Luděk Charge absorbed in a specimen during observation in SEM is a result of unbalance between incoming and emitted electrons. In a nonconductive specimen, the charge remains localized and the electric field influences the trajectories of both the primary beam and the signal electrons moving toward a detctor so that the geometry as well as the intensity scale of the image are damaged. Among the methods invented to avoid the surface charging, imaging at critical energies belongs to the most progressive ones. Úplný záznam
	Recent trends in low voltage scanning electron microscopy for the imaging of semiconductor devices Hutař, Otakar ; Müllerová, Ilona ; Romanovský, Vladimír ; Zobačová, Jitka The technology of semiconductor devices microfabrication becomes presently the main consumer of imaging methods by means of low voltage scanning electron microscopy (LVSEM). The main tasks are the inspection after lithograophic masking and etching processes, including measurements of critical linewidth dimension (CD), and the imaging of three dimensional high aspect ratio structures. Úplný záznam
	Imaging of semiconductor structures in environmental SEM Romanovský, Vladimír ; Hutař, Otakar The charging effects are encountered very often when the semiconductor specimens are observed. There are several possibilities how to eliminate these undesirable phenomena. One of the newest methods how to suppress charging of specimens is environmental scanning electron microscopy (ESEM). Ionisation of gas molecules caused by impacts of primary beam electrons and signal electrons in the close vicinity of the specimen surface removes the surface charge. The ionisation detectors used in ESEM enable one to obtain similar information as in classical SEM. Úplný záznam
	Dimension measurement in a cathode lens equipped low-energy SEM Hutař, Otakar ; Oral, Martin ; Müllerová, Ilona ; Frank, Luděk The paper deals with calibration of magnification in a cathode lens equipped SEM, which provides a high resolution in the energy range below 2000 eV, where both the charging-up and edge effect phenomena, complicating the measurement of dimensions, are suppressed. An analytical expression for the image magnification, in the dependence on the electron impact energy and the working distance, is derived and verified with respect to the measured values. Finally, a procedure suitable for the routine calibration is proposed. Úplný záznam
	Application of low-energy backscattered electron detection in the inspection of semiconductor devices technology Hutař, Otakar ; Oral, Martin ; Müllerová, Ilona ; Romanovský, Vladimír The low energy backscattered electron (BSE) detector, equipped with an electrostatic immersion lens for the retardation of the primary electron beam (PE) was elaborated and used for the imaging of surface semiconductor device specimens in a commercial SEM. Despite the signal of BSE is generally lower than that obtained using secondary electrons (SE), the achieved results predestine this BSE detection method as a suitable tool for the inspection of the fine structures of semiconductor devices and linewidth measurement of critical dimension (CD). Úplný záznam
	The Separation of Secondary Electrons in Annular and Planar Detectors Hutař, Otakar ; Autrata, Rudolf Úplný záznam
	Noncharging Microscopy of Semiconductor Structures Hutař, Otakar Úplný záznam
	Diagnostika elektrotechnických materiálů s použitím nízkovoltové rastrovací elektronové mikroskopie Hutař, Otakar Úplný záznam
	Využití detekce zpětně odražených elektronů v rastrovací elektronové mikroskopii pro studium materiálů Autrata, Rudolf ; Hutař, Otakar ; Jirák, Josef ; Špinka, Jiří Úplný záznam

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