National Repository of Grey Literature 69 records found  beginprevious49 - 58nextend  jump to record: Search took 0.00 seconds. 
Comparison of techniques for diffraction grating topography analysis
Matějka, Milan ; Rek, Antonín ; Mika, Filip ; Fořt, Tomáš ; Matějková, Jiřina
There are a wide range of analytical techniques which may be used for surface structure characterization. For high resolution surface investigations, two commonly used techniques are Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Both techniques are capable resolve surface structure down to the nanometer in scale. However the mechanism of topography imaging and type of information acquired is different.
Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09)
Pokorná, Zuzana ; Mika, Filip
ISI ASCR in Brno is primarily a methodological institute creating and developing new experimental methods for several areas of physics, chemistry and biomedicine. Among these, methodology of the scanning electron microscopy occupies an important position. One of long time projects concerns microscopy with very slow electrons, much slower than what was for decades, until quite recently, available at the market of microscopes. Demonstration of new instrumental methods needs to have good partners in application areas, willing to enter unknown territories. On this basis, the collaboration between the University of Toyama and ISI in Brno exists and flourishes, producing plenty of common results and success stories.
Profiling of N-Type Dopants in Silicon Based Structures
Hovorka, Miloš ; Mika, Filip ; Frank, Luděk ; Mikulík, P.
We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM and PEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter.
Prevence tvorby uhlovodíkové kontaminace v SEM
Dvořáková, Marie ; Mika, Filip
Electron beam-induced contamination is one of the most undesirable effects in SEM. In this work the contamination was formed on silicon wafer, copper, aluminium, stainless plate and nickel samples. The contamination was removed by the plasma cleaning (XEI Scientific Evactron De-Contaminator).
Současné trendy v elektronové optice a přístrojové technice pro povrchovou fyziku
Mika, Filip
Proceedings of seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. The seminar was held in Skalsky Dvur hotel on July 14 – 18, 2008. The seminar is periodically prepared by ISI AS CR v.v.i., Department of Electron Optics and it is a traditional opportunity for scientific discussion of topics regarding creation and formation of charged particles beams and its usage.
Detection of secondary electrons in SEM
Konvalina, Ivo ; Hovorka, Miloš ; Wandrol, P. ; Mika, Filip ; Müllerová, Ilona
The three detection systems of secondary electrons were simulated in order to determine which part of the emitted SEs is collected.
The Laboratories for Electron Microscopy and Image Analysis presentation
Hanzlíková, Renáta ; Mika, Filip ; Matějková, Jiřina
Laboratories for Electron Microscopy (LEM) are equipped with scanning electron microscopes (SEM) that provide imaging conductive and non-conductive specimens. Further LEM offer energy dispersive X-ray microanalysis (EDX) for determination of composition.
Imaging of doped silicon structures using PEEM and LVSEM
Hovorka, Miloš ; Mika, Filip ; Frank, Luděk
Study of doped silicon structures using photoemission electron microscopy and low-voltage scanning electron microscopy.
Dynamické chování kontrastu dopantů v LVSEM
Mika, Filip ; Frank, Luděk
Contrast between differently doped areas in semiconductors can be observed in the secondary electron emission in a scanning electron microscope. Behaviour of the contrast in dependence on the incident electron dose and energy and on the presence of surface adlayers has been studied on different doped samples.
Detekční strategie pro sběr sekundárních elektronů v REM
Konvalina, Ivo ; Hovorka, Miloš ; Wandrol, Petr ; Mika, Filip ; Müllerová, Ilona
In the scanning electron microscope (SEM), the secondary electrons (SE) are usually detected by the Everhart-Thornley (ET) type detector, using a weak electrostatic field to attract low energy SE let us call it the standard system. This principle is employed for more than forty years. Modern SEMs achieve their improved image resolution by allowing the strong magnetic field of the objective lens (OL) to penetrate to the specimen surface (so called immersion system). Two SE detectors are usually used in this case: one is below the OL just as the standard ET detector (lower detector) and the other is positioned above the OL (upper detector). The final contrast of SE images for the same specimen varies with the energy and angular sensitivity of the detectors, connected with specific distributions of the electrostatic and magnetic fields in the specimen region.

National Repository of Grey Literature : 69 records found   beginprevious49 - 58nextend  jump to record:
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