Original title: General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
Authors: Hulicius, Eduard ; Hájek, František ; Hospodková, Alice ; Hubík, Pavel ; Gedeonová, Zuzana ; Hubáček, Tomáš ; Pangrác, Jiří ; Kuldová, Karla
Document type: Papers
Conference/Event: International Conference on Nanomaterials - Research & Application /13./ NANOCON, Brno (CZ), 20211020
Year: 2021
Language: eng
Abstract: GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Reduction of dislocation density considerably increases electron mobility in 2DEG. All presented results support our expectation that a suitably designed AlGaN back barrier can help to prevent this phenomenon.
Keywords: dislocation; GaN devices; HEMT; MOVPE epitaxy
Project no.: LM2018110 (CEP), LTAIN19163, CZ.02.1.01/0.0/0.0/16_019/0000760, EF16_019/0000760
Funding provider: GA MŠk, GA MŠk, OP VVV - SOLID21, GA MŠk
Host item entry: NANOCON 2021 - Conference proceedings, ISBN 978-80-88365-00-6, ISSN 2694-930X
Note: Související webová stránka: https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: https://hdl.handle.net/11104/0333759

Permalink: http://www.nusl.cz/ntk/nusl-508705

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Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
 Record created 2022-09-28, last modified 2023-04-09

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