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Review of nanocrystalline diamond film deposition on silicon and glass substrates down to 400 °C
Potocký, Štěpán ; Babchenko, Oleg ; Ižák, Tibor ; Varga, Marián ; Kromka, Alexander ; Rezek, Bohuslav ; Michalka, M.
We present an overview of a nanocrystalline diamond (NCD) films deposition on silicon and glass substrates by microwave plasma CVD in hydrogen-based gas mixture. The temperature plays a crucial parameter as the diamond growth process is temperature controlled. Use of temperature sensitive substrates demanded reducing substrate temperature. Natural decrease of deposition rate resulted in search of new or nonstandard process parameters which could at least minimize or compensate it. Addition of oxygen containing gasses was found to improve film quality, and increasing deposition speed. Moreover improvement in pre-treatment of foreign substrates allowed deposition of fully closed films in less then 100 nm. Low thickness of NCD always favorable due to lattice mismatch between substrate material and NCD film. Successful adoption of NCD film deposition on silicon and glass allowed us to study surface chemical modification for protein attachment and DNA immobilization.
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Synthesis, structure, and opto-electronic properties of organic dies on diamond
Rezek, Bohuslav ; Čermák, Jan ; Ukraintsev, Egor ; Hubík, Pavel ; Mareš, Jiří J. ; Ledinský, Martin ; Fejfar, Antonín ; Kočka, Jan ; Kromka, Alexander
We prepare a thin-film heterojunction of polypyrrole (Ppy) on hydrogen-terminated diamond by electro-polymerization from solution. We combine advanced scanning techniques (AFM, KFM, micro-Raman) to characterize microscopic structural, chemical, and opto-electronic properties of such system.
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Diamond chemical vapor deposition
Kromka, Alexander
Present paper reviews growth of diamond thin films by various chemical vapor deposition processes. Basic characteristics and common features of processes are pointed out with a respect to quality of grown films and standard process parameters. Novel and non-standard diamond syntheses techniques are briefly discussed.
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