|
|
Study of photovoltaic nanostructures using microscopy methods
Hertl, Vít ; Valenta,, Jan (oponent) ; Fejfar, Antonín (vedoucí práce)
At the beginning this master's thesis lays brief fundamentals to physics of solar cells, where the main processes influencing the sunlight-to-electrical energy conversion efficiency are mentioned. After that the literature research is presented giving overview of photovoltaic nanostructures (e.g. nanowires, nanocrystals), which allow to increase the efficiency of the solar cells when implemented. Further, the experimental characterization techniques of the photovoltaic nanostructures are presented, focused especially at correlative SEM and AFM, conductive AFM, EBIC and microscopical electroluminescence measurements. In the experimental part the results obtained from the following samples are presented: Microcrystalline silicon structures, the sample of interdigitated back-contact Si heterojunction solar cell (IBC-SHJ from project NextBase) and V-pits in the sample with InGaN/GaN quantum wells. Electroluminescence measurement was performed on the III-V semiconductors (InGaP, GaAs). Some characteristics of the III-V tandem solar cells that are hard to obtain by ordinary methods were computed from electroluminescence. Finally, the EBIC and microscopical electroluminescence measurements were compared for IBC-SHJ solar cell. Experiments on microcrystalline silicon revealed division of two current routes; through the AFM tip and into the sample with the electron beam serving as the current source.
|
|
|
Aplikace korelativní AFM/SEM mikroskopie
Hegrová, Veronika ; Fejfar, Antonín (oponent) ; Konečný, Martin (vedoucí práce)
Tato práce se zabývá využitím korelativní sondové a elektronové mikroskopie. Měření bylo provedeno pomocí atomárního silového mikroskopu LiteScope navrženého speciálně ke kombinaci s elektronovými mikroskopy. Výhody korelativního AFM/SEM zobrazení jsou demonstrovány na vybraných vzorcích z oblasti nanotechnologií a materiálových věd. Možné aplikační využití korelativního AFM/SEM zobrazení bylo navrženo a následně realizováno zejména v případě nízkodimenzionálních struktur a tenkých vrstev. Dále se tato práce věnuje možnosti kombinace korelativní AFM/SEM mikroskopie s dalšími integrovanými metodami elektronového mikroskopu jako technikou fokusovaného iontového svazku a rentgenovou spektroskopií.
|
|
|
Application of plasmonics in organic photovoltaics
Láska, Martin ; Fejfar, Antonín (oponent) ; Šikola, Tomáš (vedoucí práce)
The diploma thesis deals with the study of the plasmon-enhanced absorption leading to an improvement of the power conversion efficiency in organic solar cells. To increase the light absorption in the photoactive layer, colloidal silver nanoparticles are used. The scattering of the light from silver nanoparticles into the photoactive layer represents one of possible solutions how to increase the power conversion efficiency of photovoltaic devices. To perform electromagnetic simulations in the steady-state regime, the software Lumerical (Lumerical Solutions, Inc.), is used. For different geometrical arrangements of silver nanoparticles, the absorption in photoactive layer is observed. Simulations prove the enhancement of the absorption in the photoactive layer while incorporating silver nanoparticles. To confirm results from simulations, a couple of samples modified with silver nanoparticles, is produced. Samples produced for this kind of experiments are based on Poly(3-hexylthiophene):[6,6]-Phenyl-C61-butyric-acid-methyl ester. For some samples modified with silver nanoparticles, an exciton creation is improved. As the result, the enhancement in the short-circuit current is observable. Here, the theoretical and experimental approach to this topic is reviewed.
|
|
|
Application of Scanning Probe Microscope in Nanoscience and Nanotechnology
Konečný, Martin ; Klapetek, Petr (oponent) ; Fejfar, Antonín (oponent) ; Bartošík, Miroslav (vedoucí práce)
This doctoral thesis is devoted to application of Scanning Probe Microscopy (SPM) in nanoscience and nanotechnologies with the main focus on advanced Atomic Force Microscopy (AFM) techniques, such as conductive AFM (cAFM), Kelvin Probe Force Microscopy (KPFM), and their utilization in graphene research. First, a brief introduction to SPM techniques is provided and followed by a review of recent application of AFM and KPFM in characterization of graphene and graphene-based devices. Further, the doctoral thesis introduces a novel approach to combine AFM with Scanning Electron Microscopy (SEM). The review leads to estimation of main topics of doctoral research. These topics cover a study of electrical communication between separated graphene sheets, electrical properties of hydrogenated graphene and characterization of graphene-metal nanostructures used for biosensing. The work is further focused on a demonstration of correlative AFM/SEM imaging and on a technical realization of advanced techniques on AFM specially designed for integration into SEM. Each topic is discussed and supported by relevant experimental results. Finally, the prospects of future research is outlined.
|
|
|
Thin-Film Solar Cells Characterization and Microstructure Defect Analysis
Škvarenina, Ľubomír ; Šály,, Vladimír (oponent) ; Fejfar, Antonín (oponent) ; Macků, Robert (vedoucí práce)
Thin-film solar cells based on an absorber layer of chalcogenide compounds (CIGS, CdTe) are today among the most promising photovoltaic technologies due to their long-term ability to gain a foothold in mass commercial production as an alternative to conventional Si solar cells. Despite this success, the physical origin of the defects present in the thin films are still insufficiently elucidated, especially in the compounds of the chalcopyrite family Cu(In_{1x},Ga_{x})(S_{y},Se_{1y})_{2}. The research focuses on the identification and analysis of microstructural defects responsible for the electrical instability of chalcopyrite-based thin-film solar cells with a typical heterostructure arrangement ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se_{2}/Mo. The non-uniform polycrystalline nature of semiconductor materials in this complex multilayer structure requires a comprehensive analysis of electro-optical, structural and compositional properties associated with the actual morphology at the macroscopic, microscopic or even nanoscopic level. The observed predominant ohmic or non-ohmic current conduction in the dark transport characteristics was also reflected in the slope deviations of the excessive noise fluctuations, which were in the spectral domain exclusively in the form of flicker noise with dependency S_{i} ~ f^{1}. Spatially resolved electroluminescence based on stimulated photon emission by charge carriers injecting into the depletion region, not only showed a significantly inhomogeneous distribution of intensity in planar heterojunction under forward bias, but also revealed light emitting local spots in reverse bias due to a trap-assisted radiative recombination through the high density of defect states. Microscopic examination of the defect-related light emitting spots revealed rather extensive defective complexes with many interruptions through the layers, especially at the heterojunction CdS/Cu(In,Ga)Se_{2} interface. Besides, the high leakage current via these defective complexes subsequently led to a considerable local overheating, which caused a clearly observable structural and morphological changes, such as deviations in absorber layer stoichiometry due to Cu–In–Ga–Se segregation, Cu-rich and Ga-rich grains formation with an occurrence of Se-poor or Cu_{x}Se_{y} secondary phases regions, material redeposition accompanied by evaporation of ZnO:Al/i-ZnO/CdS layers together with the formation of Se structures on the surface around the defects. Within the research, analytical modelling of transport characteristics was implemented with parameters extraction of individual transport mechanisms to understand the non-ohmic shunt behaviour due to leakage current. In addition to the proper current path along the main heterojunction, the proposed model contains parasitic current pathways as a consequence of recombination-dominated charge transport or current conduction facilitated by multi-step tunnelling via high density of mid-gap defect states in the depletion region, ohmic leakage current caused by pinholes or low-resistance paths along grain boundaries in Cu(In,Ga)Se_{2}, or space-charge limited current due to metals diffusion from the ZnO:Al layer and grid Ag contacts through disruptions in i-ZnO/CdS layers.
|
|
| |
|
|
Study of Thin-Film Surfaces
Trivedi, Rutul Rajendra ; Fejfar, Antonín (oponent) ; Klapetek, Petr (oponent) ; Šikola, Tomáš (oponent) ; Čech, Vladimír (vedoucí práce)
doctoral thesis deals with the study of surface properties of single-layer and multilayer thin films deposited from of vinyltriethoxysilane and tetravinylsilane monomers. It also deals with adhesion characterization of single layer tetravinylsilane films. The plasma polymerized thin films were prepared under steady-state deposition conditions on polished silicon wafers using plasma-enhanced chemical vapor deposition. The surface properties of the films were been characterized by different scanning probe microscopy methods and nanoindentation techniques such as conventional depth-sensing nanoindentation and load-partial-unload (cyclic) nanoindentation. While, the nanoscratch test was used to characterize the film adhesion properties. Single layer films prepared at different deposition conditions were characterized with respect to surface morphology and mechanical properties (Young’s modulus and hardness). The results of surface morphology, grain analysis, nanoindentation, finite elemental analysis and modulus mapping helped to know the hybrid nature of single layer films that were deposited at higher powers of RF-discharge. A novel approach was used in surface characterization of multilayer film by scanning probe microscopy and nanoindentation. The adhesion behavior of plasma polymer films of different mechanical properties and film thickness were analyzed by normal and lateral forces, friction coefficient, and scratch images obtained by atomic force microscopy.
|
|
|
Microdefects in Czochralski Silicon
Válek, Lukáš ; Fejfar, Antonín (oponent) ; Mikulík, Petr (oponent) ; Spousta, Jiří (vedoucí práce)
The doctoral thesis deals with analyses of defects in single crystals of Czochralski silicon doped with boron. Mechanisms of formation of circular patterns of oxidation induced stacking faults are studied. The main goal of the work is to explain the mechanisms of formation of the observed defect patterns and to develop methods for control of this phenomenon. Mechanisms of defect formation in silicon are analyzed and the material is experimentally studied in order to explain relations between formation of defects of various kinds and to link these processes to parameters of the crystal and its growth. A qualitative model capturing all these relations is built and utilized to develop an optimized crystal growth process for suppression of excessive formation of the oxidation induced stacking faults. Novel methods are developed and implemented to support effective analyses of crystal defects. This doctoral thesis was written with the support of ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
|
|
|
Studium vlastností kovových tenkých vrstev a nanostruktur pomocí rastrovací sondové mikroskopie
Doupal, Antonín ; Fejfar, Antonín (oponent) ; Kalousek, Radek (vedoucí práce)
Diplomová práce je zaměřena na studium vlastností tenkých kovových vrstev a nanostruktur pomocí rastrovací sondové mikroskopie. Studovány jsou magnetické vlastnosti, a to pomocí mikroskopie magnetických sil, což je jedna z modifikací rastrovací sondové mikroskopie. V teoretické části jsou shrnuty základní principy rastrovací sondové mikroskopie a mikroskopie magnetických sil a také princip vzniku magnetických domén a jistých vlastností feromagnetických a antiferomagnetických materiálů. Dále jsou zde popsány dvě techniky výroby nanostruktur. Experimentální část je zaměřena na zobrazování a simulaci magnetických domén. Dále je tato část zaměřena na studium jevu exchange bias, který je přítomen v systémech tvořených antiferomagnetickými a feromagnetickými materiály. Součástí této diplomové práce je i diskuze problémů spojených s technikou mikroskopie magnetických sil.
|
|
|
Využití interferometrie v VT UHV SPM
Šulc, Dalibor ; Klapetek, Petr (oponent) ; Fejfar, Antonín (oponent) ; Spousta, Jiří (vedoucí práce)
Disertační práce je zaměřena na vývoj rastrovacích sondových mikroskopů. Popisuje ná- vrh a vývoj modulární řídicí elektroniky, aby mohla být využita u více mikroskopů SPM. Řídicí elektronika se sestává ze stabilizovaného zdroje napětí, vysokonapěťového zesilo- vače a zesilovače signálu sondy. Byl představen open–source projekt GXSM, tj. kontroler řídící rastrování, snímání dat a ovládá zpětnou vazbu. Dále GXSM obsahuje i gracké uživatelské rozhraní pro operační systémy linux. Pomocí rozhraní jsou nastavovány poža- dované parametry měření, zpětné vazby atd. Druhá část práce je věnována popisu, návrhu a vývoji systému pro interferometrické odměřování výchylky raménka AFM a využití in- terferometrie v oblasti SPM obecně. Navržený interferometr byl úspěšně sestaven a otes- tován. Nejnižší dosažená rozlišitelná výchylka je 2 nm. V závěru je prezentován návrh implementace interferometrického odměřování výchylky raménka AFM.
|
host ::
RSS.