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National Repository of Grey Literature

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	Detektory rtg a částicového záření na bázi indium fosfidu Pekárek, Ladislav ; Žďánský, Karel Indium phospide single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain semi-insulating crystals suitable for detection purposes. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays. Detailed record
	Růst InP metodou LPE s přídavkem prvků vzácných zemin do taveniny Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel Addition of REs to the growth melt is known to have purifying effect on AIIIBV LPE layers. Each member of REs family acts in its own way. Small addition of Tb, Dy, Tm, and Pr leads to pronounced gettering of shallow donors, the high purity n-type InP can be grown. Exceeding certain concentration, reversal of conductivity type from n to p occurs. Addition of Tm during growth on InP:Fe substrates always results in the preparation of semi-insulating layers due to Fe out-diffusion mediated by RE admixture. Detailed record
	Thickness dependence of transport properties of Bi.sub.2./sub.Te.sub.3./sub. layers Zeipl, Radek ; Lošťák, P. ; Pavelka, Martin ; Žďánský, Karel ; Jelínek, Miroslav ; Walachová, Jarmila The transport properties of layers, prepared by laser ablation, as Hall mobility and conductivity on their thickness at room temperature are presented. This thermoelectric materials is potential candidate for many applications as for thermoelectric devices for power generation, cooling and sensors. Detailed record
	Thickness dependence of transport properties of Bi.sub.2./sub.Te.sub.3./sub. layers Zeipl, Radek ; Lošťák, P. ; Pavelka, Martin ; Žďánský, Karel ; Jelínek, Miroslav ; Walachová, Jarmila The transport properties of layers, prepared by laser ablation, as Hall mobility and conductivity on their thickness at room temperature are presented. This thermoelectric materials is potential candidate for many applications as for thermoelectric devices for power generation, cooling and sensors. Detailed record
	Characterisation of InP layers prepared by the LPE method with Pr and Nd addition in the growth melt Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel High purity InP epitaxial layers were grown by LPE from the melt conataining, besides essential components, also rare-earth elements admixture. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. The behaviour and the impact of Pr and Nd were compared. The concentration of shallow impurities was reduced by up to three orders of magnitude. PL spectra were markedly narrowed and fine spectral features were resolved. Detailed record
	Characterisation of GaInAsP layers prepared by liguid-phase epitaxy using holmium doping Procházková, Olga ; Šrobár, Fedor ; Zavadil, Jiří ; Žďánský, Karel Detailed record
	Speciální metody měření fotoluminiscenčních spekter a topogramů polovodičových materiálů. Zpráva o řešení projektu č. 0361/FDR v roce 1993 Procházková, Marie ; Puchta, Miloš ; Žďánský, Karel ; Zavadil, Jiří Detailed record
	Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel Growth of the Ga.sub.x./sub.In.sub.1-x./sub.P/GaAs(100) heterostructures from the liquid phase was optimized at 800.sup.o./sup.C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects has been suggested. Detailed record
	Doba života nosičů náboje a Seebeckův koeficient v polovodičích Vacková, S. ; Gorodynskyy, Vladyslav ; Žďánský, Karel ; Vacek, K. ; Kozak, Halina The lifetime of carriers represents an important parameter of radiation detectors which is characteristic for them. Usually the current experimental technique for their measurement makes use of different experimental methods, as photoconductivity. Very often the product of mobility and lifetime is introduced as a criterion for the semiconductor suitability of radiation detection. Detailed record
	Příprava dopovaných a kodopovaných monokrystalů fosfidu inditého Pekárek, Ladislav ; Žďánský, Karel Indium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czochralski method. The wafers of the grown crystals were characterized by resistivity an Hall measurements and their suitability for radiation detection was assessed. Detailed record

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