Original title: Characterisation of InP layers prepared by the LPE method with Pr and Nd addition in the growth melt
Authors: Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel
Document type: Papers
Conference/Event: Workshop 2001, Prague (CZ), 2001-02-05 / 2001-02-07
Year: 2001
Language: eng
Series: CTU Reports., volume: Vol. 5, 2001 Sp. Issue
Abstract: High purity InP epitaxial layers were grown by LPE from the melt conataining, besides essential components, also rare-earth elements admixture. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. The behaviour and the impact of Pr and Nd were compared. The concentration of shallow impurities was reduced by up to three orders of magnitude. PL spectra were markedly narrowed and fine spectral features were resolved.
Keywords: III-V semiconductors; liquid phase epitaxial growth; rare earth compounds
Project no.: CEZ:AV0Z2067918 (CEP), GA102/99/0341 (CEP), KSK1010601 Projekt 7/96/K:4073 (CEP)
Funding provider: GA ČR, GA AV ČR
Host item entry: Proceedings of Workshop 2001

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0114052

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