Original title: Preparation of doped and co-doped indium phosphide single crystals
Translated title: Příprava dopovaných a kodopovaných monokrystalů fosfidu inditého
Authors: Pekárek, Ladislav ; Žďánský, Karel
Document type: Papers
Conference/Event: Development of Materials Science in Research and Education - DMS-RE 2004 /14./, Lednice (CZ), 2004-08-31 / 2004-09-03
Year: 2004
Language: eng
Abstract: [eng] [cze]
Indium phosphide crystals doped with various impurity atoms were grown by liquid encapsulation Czochralski method. The wafers of the grown crystals were characterized by resistivity an Hall measurements and their suitability for radiation detection was assessed. Krystaly fosfidu inditého byly vypěstovány metodou Czochralského s kapalným uzávěrem. Destičky z vypěstovaných krystalů byly charakterizovány měřením rezistivity a Hallova napětí a byla zhodnocena jejich vhodnost pro radiační detekci.
Keywords: crystal growth; radiation detection; semiconductor doping
Project no.: CEZ:AV0Z2067918 (CEP), IBS2067354 (CEP)
Funding provider: GA AV ČR
Host item entry: Development of Materials Science in Research and Education. Proceedings of the 14th Joint Seminar, ISBN 80-7345-032-1

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0013082

Permalink: http://www.nusl.cz/ntk/nusl-19970


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers