Original title: Characterisation of GaInAsP layers prepared by liguid-phase epitaxy using holmium doping
Authors: Procházková, Olga ; Šrobár, Fedor ; Zavadil, Jiří ; Žďánský, Karel
Document type: Papers
Conference/Event: Photonics'95, Prague (CZ), 1995-08-23 / 1995-08-25
Year: 1995
Language: eng
Series: Annual Meeting Digest Series., volume: 2B
Keywords: semiconductor epitaxial layers; semiconductor materials; semiconductor technology
Project no.: 102/93/0642
Funding provider: GA ČR
Host item entry: Photonics'95

Institution: Institute of Photonics and Electronics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0113056

Permalink: http://www.nusl.cz/ntk/nusl-32239


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Research > Institutes ASCR > Institute of Photonics and Electronics
Conference materials > Papers