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Preparation of InAs nanowires by MBE
Stanislav, Silvestr ; Maniš, Jaroslav (referee) ; Musálek, Tomáš (advisor)
The bachelor’s thesis deals with growth of InAs nanowires grown on silicon substrate by molecular beam epitaxy. The emphasis is mainly layed on fabrication of nanowires grown via Vapour-Liquid-Solid mechanism using gold catalytic nanoparticles. There is a brief description of two most common mechanisms of nanowire growth in the first part of the thesis. The text also discusses crystal structure of InAs and doping options of InAs nanowires. The experimental part is aimed at deposition and the impact of different growth conditions on both growth mechanism and nanowire morphology.
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Optical characterization of InAs nanowires
Hošková, Michaela ; Ligmajer, Filip (referee) ; Musálek, Tomáš (advisor)
This bachelor thesis deals with the fabrication and optical characterization of InAs nanowires. Physical vapor deposition is used for the fabrication of nanowires via method selective epitaxy in the MBE chamber. The growth conditions for the formation of nanowires are optimized and their dimensions are characterized by a scanning electron microscope. Confocal spectroscopy and electron energy loss spectroscopy are employed for measurement of the optical response and the influence of the geometry of individual nanowires is studied. The motivation is the development of a new optical method that monitors nanowires directly during growth in the MBE apparatus.
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Preparation of low-dimensional III-V semiconductors
Stanislav, Silvestr ; Detz, Hermann (referee) ; Kolíbal, Miroslav (advisor)
Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Optical characterization of InAs nanowires
Hošková, Michaela ; Ligmajer, Filip (referee) ; Musálek, Tomáš (advisor)
This bachelor thesis deals with the fabrication and optical characterization of InAs nanowires. Physical vapor deposition is used for the fabrication of nanowires via method selective epitaxy in the MBE chamber. The growth conditions for the formation of nanowires are optimized and their dimensions are characterized by a scanning electron microscope. Confocal spectroscopy and electron energy loss spectroscopy are employed for measurement of the optical response and the influence of the geometry of individual nanowires is studied. The motivation is the development of a new optical method that monitors nanowires directly during growth in the MBE apparatus.
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Preparation of low-dimensional III-V semiconductors
Stanislav, Silvestr ; Detz, Hermann (referee) ; Kolíbal, Miroslav (advisor)
Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Preparation of InAs nanowires by MBE
Stanislav, Silvestr ; Maniš, Jaroslav (referee) ; Musálek, Tomáš (advisor)
The bachelor’s thesis deals with growth of InAs nanowires grown on silicon substrate by molecular beam epitaxy. The emphasis is mainly layed on fabrication of nanowires grown via Vapour-Liquid-Solid mechanism using gold catalytic nanoparticles. There is a brief description of two most common mechanisms of nanowire growth in the first part of the thesis. The text also discusses crystal structure of InAs and doping options of InAs nanowires. The experimental part is aimed at deposition and the impact of different growth conditions on both growth mechanism and nanowire morphology.
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Characterisation of InAs/GaAs quantum dots by high resolution transmission electron microscopy
Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J.
The InAs/GaAs quantum dots (QDs) covered by GaAsSb strain reducing layer (SRL) have suitable properties for various applications. The GaAsSb SRL covering InAs QDs is used to improve the structure growth and the final parameters like QD density, QD size or photoluminesence. To obtain high-quality structure with required properties, the structure growth and final structure have to be deeply studied. Since the QDs and SRL system is surrounded by GaAs, the high resolution transmission electron microscopy (HRTEM) measurement was used to reveal the real material arrangement in a prepared sample. In this work we will discuss the results of following HRTEM measurements: flatness and thickness of prepared layers, QD size, atomic arrangement and composition of GaAsSb layer.
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GaAsSb strain reducing layer covering InAs/GaAs quantum dots
Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Oswald, Jiří ; Kubištová, Jana ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J. ; Nikitis, F.
GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.
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