Original title: Study of InAs/GaAs quantum dots grown by LP-MOVPE
Translated title: Studie InAs/GaAs kvantových teček vypěstovaných technologií LP-MOVPE
Authors: Hazdra, P. ; Atef, M. ; Komarnitsky, V. ; Oswald, Jiří ; Kuldová, Karla ; Hulicius, Eduard
Document type: Papers
Conference/Event: International Conference NANO´07, Brno (CZ), 2007-10-08 / 2007-10-10
Year: 2007
Language: eng
Abstract: [eng] [cze]
We show simulation study of electronic transition energy for InAs/GaAs quantum dots fabricated with LP-MOVPE. The simulation results were compared with experimental data obtained by AFM and photoluminescence. Studovali jsme výpočet elektronových energií InAs/GaAs kvantových teček, které byly připraveny pomocí nízkotlaké MOVPE technologie. Výsledky simulace byly porovnány s experimentálně získanými daty z AFM a fotoluminiscence.
Keywords: electronic states; GaAs; InAs; MOVPE; quantum dots; simulation
Project no.: CEZ:AV0Z10100521 (CEP)
Host item entry: NANO´07, ISBN 978-80-214-3460-8

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0158352

Permalink: http://www.nusl.cz/ntk/nusl-38514


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Research > Institutes ASCR > Institute of Physics
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