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Properties of InAs/GaAs quantum dots in vertically correlated structures with 2 QD layers grown by MOVPE
Vyskočil, Jan ; Hospodková, Alice ; Pangrác, Jiří ; Oswald, Jiří ; Mates, Tomáš ; Melichar, Karel ; Šimeček, Tomislav ; Hulicius, Eduard
We have studied the shape of QDs in structures with vertically correlated QDs where two layers of QDs were grown. We investigated the influence of spacer thickness on lateral shape (elongation) of QDs and photoluminescence intensity.
MOVPE InAs/GaAs quantum dots with long-wavelength emission
Oswald, Jiří ; Kuldová, Karla ; Hospodková, Alice ; Hulicius, Eduard ; Pangrác, Jiří ; Mates, Tomáš ; Melichar, Karel ; Vyskočil, Jan
One method which enables the shift of photoluminescence spectra of InAs/GaAs quantum dots toward longer wavelengths is the covering of the dots by In.sub.x./sub.Ga.sub.1-x./sub.As strain reducing layer. With the increasing x we have observed the shift of PL maxima from 1.28 μm to 1.46 μm.
Vlastnosti vertikálně uspořádaných struktur kvantových teček
Hospodková, Alice ; Kuldová, Karla ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří
We have studied the overlap of electron wave functions of stacked QDs. We have found that for sample with the spacer thickness 15 nm the electron wave functions of QDs in stack are fully separated. We have found that for spacer thickness around 7 nm the electron wave functions of smaller QDs from deeper layers still overlap while the electron wave function of bigger QDs at top layers remain separated.
Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE
Hulicius, Eduard ; Pacherová, Oliva ; Oswald, Jiří ; Hospodková, Alice ; Pangrác, Jiří ; Šimeček, Tomislav ; Melichar, Karel ; Petříček, Otto ; Chráska, T. ; Holý, V. ; Vávra, I. ; Ouattara, L.
We have found that the abruptness and symmetry on monoatomic scale is achievable with MOVPE technique as well. We are able to find only the periodicity in these structures while atomic resolution pictures give reliable thickness values.
InAs/GaAs quantum-size structures grown by MOVPE
Hospodková, Alice ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Šimeček, Tomislav
Structures with quantum size objects as self-organised quantum dots, quantum rings, wires and quasi-quantum wells could be reproducibly grown by MOVPE. The advantage of MOVPE technology is its material variability, operating costs and relation to the industry.
Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC).

National Repository of Grey Literature : 22 records found   beginprevious13 - 22  jump to record:
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