Original title: Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE
Translated title: Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE
Authors: Hulicius, Eduard ; Pacherová, Oliva ; Oswald, Jiří ; Hospodková, Alice ; Pangrác, Jiří ; Šimeček, Tomislav ; Melichar, Karel ; Petříček, Otto ; Chráska, T. ; Holý, V. ; Vávra, I. ; Ouattara, L.
Document type: Papers
Conference/Event: NANO ´04 International Conference, Brno (CZ), 2004-10-13 / 2004-10-15
Year: 2004
Language: eng
Abstract: [eng] [cze]
We have found that the abruptness and symmetry on monoatomic scale is achievable with MOVPE technique as well. We are able to find only the periodicity in these structures while atomic resolution pictures give reliable thickness values. Zjistili jsme, že strmost a symetrie na atomární úrovni je také dosažitelná s technologií MOVPE. V těchto strukturách jsme schopni nalézt pouze periodicitu, zatímco obrázky s rozlišením na atomární úrovni dávají spolehlivé údaje o tlouštce.
Keywords: GaAs; InAs; quantum well; semiconductor laser; TEM; X-ray diffraction; XSTM
Project no.: CEZ:AV0Z1010914 (CEP), GP202/02/D069 (CEP), GA202/03/0413 (CEP), IAA1010318 (CEP), KSK1010104 (CEP)
Funding provider: GA ČR, GA ČR, GA AV ČR, GA AV ČR
Host item entry: NANO ´04, ISBN 80-214-2793-0

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0116879

Permalink: http://www.nusl.cz/ntk/nusl-32932


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