Original title: Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE
Translated title: Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE
Authors: Hulicius, Eduard ; Pacherová, Oliva ; Oswald, Jiří ; Hospodková, Alice ; Pangrác, Jiří ; Šimeček, Tomislav ; Melichar, Karel ; Petříček, Otto ; Chráska, T. ; Holý, V. ; Vávra, I. ; Ouattara, L.
Document type: Papers
Conference/Event: NANO ´04 International Conference, Brno (CZ), 2004-10-13 / 2004-10-15
Year: 2004
Language: eng
Abstract: [eng] [cze]

Keywords: GaAs; InAs; quantum well; semiconductor laser; TEM; X-ray diffraction; XSTM
Project no.: CEZ:AV0Z1010914 (CEP), GP202/02/D069 (CEP), GA202/03/0413 (CEP), IAA1010318 (CEP), KSK1010104 (CEP)
Funding provider: GA ČR, GA ČR, GA AV ČR, GA AV ČR
Host item entry: NANO ´04, ISBN 80-214-2793-0

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0116879

Permalink: http://www.nusl.cz/ntk/nusl-32932

The record appears in these collections:
Research > Institutes ASCR > Institute of Physics
Conference materials > Papers
 Record created 2011-07-01, last modified 2021-11-24

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