National Repository of Grey Literature 52 records found  beginprevious43 - 52  jump to record: Search took 0.00 seconds. 
AlSb/InAsSb/AlSb deep QWs for the two band high temperature superlinear luminescence
Hulicius, Eduard ; Hospodková, Alice ; Pangrác, Jiří ; Mikhailova, M.
InAlAsSb/GaSb based hetero-nanostructures with deep quantum wells grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. Optical power and quantum efficiency of the LEDs based on the narrow bandgap semiconductor compounds (InGa)(AsSb) are limited by the nonradiative Auger recombination. Earlier we have proposed a method to increase the optical power in the bulk narrow bandgap and later in GaSb-based nanostructures with a deep QW by the effect of impact ionization on the QW with high band offset.
Comparison of organic scintillators
Nikl, Martin
Optical, luminescence and scintillation characteristics of several organic scintillator samples were compared. Quality of starting materials was found to play a role in the efficiency, while timing characteristics were not changed that much. Energy transfer processes were studied as well.
Luminescence of quantum dot heterostructures in applied electric field
Kubištová, Jana ; Zíková, Markéta ; Kuldová, Karla ; Pangrác, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Petříček, Otto ; Oswald, Jiří
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
Optical properties of nanoparticles
Voráčová, Ivona
Summary of physico-chemical properties, preparation and applications of luminescent nanoparticles.
Luminescence of nanoparticles - quantum dots
Voráčová, Ivona
Compilation of materials, physical-chemical properties, synthesis and applications of quantum dots.
Application of nanoparticles in fluorescence microscopy and raman spectrometry
Přikryl, Jan ; Svobodová, Ivona ; Hezinová, Věra ; Lišková, Marcela ; Maděránková, D. ; Klepárník, Karel ; Foret, František
This contribution is devoted to application of quantum dots as perspective luminescence labels in fluorescence microscopy (epifocal and TIR fluorescence microscopy) and application of silver nanoparticles in surface-enhanced Raman spectroscopy.
Potenciál kvantových teček při detekci jediné molekuly v buňkách a organelách
Přikryl, Jan ; Klepárník, Karel ; Svobodová, Ivona ; Hezinová, Věra ; Lišková, Marcela ; Preisler, J. ; Foret, František
This contribution is devoted to quantum dots usage for cell imaging in fluorescence microscopy. Fluorescence excitation by evanescence wave (caused by total internal reflection) is compared with conventional epifluorescence microscopy.
Luminescence in organic silicons prepared from organic precursors in plasma discharges
Horváth, P. ; Schauer, F. ; Kuřitka, I. ; Salyk, O. ; Weiter, M. ; Dokoupil, N. ; Nešpůrek, Stanislav ; Fidler, V.
Photoluminescence of plasma prepared the poly[methyl(phenyl)silanediyl] - during the change from linear 1D Si chain to amorphous 3D Si network was studied. The excitonic band with maximum at 353 nm in 1D Si undergoes a blue shift and broadening on introducing networking defects. With the gradual transition from 1D to 3D structure the redistribution of oscillator intensity along the absorption edge was observed.
Optical Properties of (GeS2)80-x(Ga2S3):xEr2S3 glasses
Ivanova, Z. G. ; Černošková, Eva ; Černošek, Z. ; Vassilev, V. S.
Infrared transmisson and photoluminescence of Er-doped (GeS2)80-x(GaS3) glassy host have beeninvestigated. The influence of Er by introduction of Er2S3 (x=0.3, 0.6 and 0.9 mol%) on these properties has been speified.
Luminiscenční vlastnosti Er:YAG a Er:YAP tenkých vrstev připravených pulsní laserovou ablací
Pavelka, Martin ; Jelínek, Miroslav ; Lančok, Ján ; Oswald, Jiří
Luminescence properties of Er:YAG and Er:YAP thin films were studied and the possibilities of creation of planar waveguide lasers were investigated

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