Original title: AlSb/InAsSb/AlSb deep QWs for the two band high temperature superlinear luminescence
Authors: Hulicius, Eduard ; Hospodková, Alice ; Pangrác, Jiří ; Mikhailova, M.
Document type: Research reports
Year: 2015
Language: eng
Abstract: InAlAsSb/GaSb based hetero-nanostructures with deep quantum wells grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. Optical power and quantum efficiency of the LEDs based on the narrow bandgap semiconductor compounds (InGa)(AsSb) are limited by the nonradiative Auger recombination. Earlier we have proposed a method to increase the optical power in the bulk narrow bandgap and later in GaSb-based nanostructures with a deep QW by the effect of impact ionization on the QW with high band offset.
Keywords: AlSb/InAsSb/AlSb; luminescence; quantum wells
Project no.: MP1204 (CEP)
Funding provider: COST

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0256048

Permalink: http://www.nusl.cz/ntk/nusl-201518


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Research > Institutes ASCR > Institute of Physics
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