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Inovation of measurement equipment used for analyzing of photovoltaick cells
Otépka, Jakub ; Bača, Petr (referee) ; Vaněk, Jiří (advisor)
This bachelor thesis deals with the design of a tachometer which is used to measure and display of mechanical aperture speed of a measuring equipment for the defect analysis of solar cells using the photoluminescence method. This work is divided into three parts. The first section describes the principle of solar cells, the principle of luminescence radiation and its types. Next the defects of solar cells are analyzed. The second part discusses the theory of tachometers, the principles and methods of loading pulses. The third part is then analyzed the design and construction of the selected type tachometer.
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Measurement of spectral characteristics in Labview environment
Konečný, Dávid ; Hégr, Ondřej (referee) ; Boušek, Jaroslav (advisor)
This work deals with design of a program for measurement of characteristics luminescence of inorganic semiconductors in LabView environment. After understanding with theoretic part a program for automated measurements was made including two type of measurements option. The program for measurement of Volt-Ampere characteristics by given wave length and for measurement of current on wave length dependencies is presented.
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Comparison of organic scintillators
Nikl, Martin
Optical, luminescence and scintillation characteristics of several organic scintillator samples were compared. Quality of starting materials was found to play a role in the efficiency, while timing characteristics were not changed that much. Energy transfer processes were studied as well.
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Luminescence of quantum dot heterostructures in applied electric field
Kubištová, Jana ; Zíková, Markéta ; Kuldová, Karla ; Pangrác, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Petříček, Otto ; Oswald, Jiří
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
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