National Repository of Grey Literature 47 records found  beginprevious38 - 47  jump to record: Search took 0.01 seconds. 
Analytic method of solar panel and systems
Kopunec, Vít ; Veselý, Aleš (referee) ; Vaněk, Jiří (advisor)
The aim of the diploma work is to introduce analytical methods concerning solar panels and systems. Firstly, the attention is drawn to a principle of photovoltaic conversion including an explanation of photoelectric phenomenon as well as the issue of P-N junction considered to be the fundamental building block of a solar cell. With respect to the fact that the diploma work is to be focused on testing of solar panels and the identification of defects in solar cells, the work describes individual solar cells, solar panels as well as individual methods of defect identification. Secondly, the work includes sections dealing with the assessment of the measurement performed by using electroluminescence method as well as the measurement method of volt-ampere parameters. The last section of the work includes the assessment of solar panel aging after one-year performance using the electroluminescence measurement method.
Photoluminescence diagnostic method with transmission illumination
Kafka, Martin ; Veselý, Aleš (referee) ; Vaněk, Jiří (advisor)
The aim of this diploma thesis is an innovation of photoluminescence measure research workplace for measurement of cells structure defects by method of transmissive illumination while employing the current methods of measurement of defect in the solar cells structure. The first part deals with explanation of historical development of solar energy, of how we can reach production of electric power with contribution of solar radiation and defines usability of solar cells in practice. The thesis further analyses a practical application of measurement via laboratory diagnostic methods used by Department of Electrotechnology Brno University of Technology. The second part is focused on mechanical design of experimental photoluminescence measure workspace used for quick diagnostic defects employing the rear arousing source for detection of defects with assistance of transmissive system of illumination. Finally, with co-operation of SOLARTEC s.r.o. three types of solar cells are measured by this new method and compared with results of measurement via diagnostic methods of LBIV (Light Beam Induced Current), LBIC (Light Beam Induced Voltage), Electroluminescence, Photoluminescence, and detection defects by radiation of Microplasma.
Solar cells photoluminescence defect detection methods
Vala, Zbyněk ; Veselý, Aleš (referee) ; Vaněk, Jiří (advisor)
This thesis discusses modern methods for fast defect detection of solar cells. For the means of the defect classification, the technological production process of crystalline silicon solar cells is described. The defects are researched by the electroluminescence and prohtoluminescence methods. The Photoluminiscence method is improved by the posibility of using different wavelenght of excitacion sources. The range of using in industrial production is determined for the discussed methods.
Study of optoelectrical properties of organic semiconductor thin film layers
Kovář, Jakub ; Weiter, Martin (referee) ; Zmeškal, Oldřich (advisor)
This thesis concerns with electrical and optoelectical properties of thin organic semiconductor layers. In the research, organic electroluminescent devices were prepared and the effect of illumination and inclusion of organic interlayers, that act as alternative electrodes, on charge injection and transport were investigated on them by means of electrical measurement and impedance spectroscopy. On the basis of measured data, the thesis attempts to determine materials best suited for interlayers, which could make an improvement of electric properties of electroluminescent devices possible. The sence of using a combination of direct current measurement and impedance spectroscopy was also discussed in the thesis.
Analyzing of photovoltaic power plant Dukovany
Mačát, J.
The article is about researching of the oldest photovoltaic panels in the Czech Republic. There are mentioned several methods of investigation using after 17 years working of photovoltaic power station. Then the article describes changes in the surface of the panels and discovered defect caused during the production and also by many years of working. Furthemore, in the article there are shown graphs of their current VA charakteristic and percentage of maximum power output change.
Characterization of lasers with ë-InAs layers in GaAs
Hazdra, P. ; Voves, J. ; Oswald, Jiří ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel ; Šimeček, Tomislav ; Petříček, Otto ; Kuldová, Karla
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance of these ë-InAs layers was studied under pulse excitation in the wide range of current densities.
Measurement of electro-optical properties of quantum-size structures based on InAs/GaAs - photocurrent and electroluminescence
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Oswald, Jiří ; Pangrác, Jiří ; Melichar, Karel ; Hospodková, Alice ; Šimeček, Tomislav
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures. The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (above 100řC).
Lasery s napjatými tenkými InAs vrstvami v GaAs - elektroluminiscence a fotoabsorpce při zvýšených teplotách
Mačkal, Adam ; Hazdra, P. ; Hulicius, Eduard ; Pangrác, Jiří ; Melichar, Karel
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs. The lasers exhibit high optical recombination efficiency, low threshold current and capability to operate at elevated temperatures
Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Mačkal, Adam
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range

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