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Preparation and characterization of MoS2 thin films
Tomková, Renáta ; Zahradníček, Radim (referee) ; Bartoš, Miroslav (advisor)
This thesis deals with topological insulators, which are described by the quantum spin Hall effect, as well as on semiconductors, where the band structure of semiconductors and more specifically mentioned unipolar transistor MOSFET is explained. There are also mentioned primarily 2D materials and in particular of MoS2. Topic focuses on its structure, the electric properties, the use and preparation by using micromechanical exfoliation. In the last chapter it is described how to prepare MoS2 structures and their analysis. Structural properties of this material were measured by the AFM and Raman spectroscopy. The experimental part there are illustrative photograph of MoS2 taken with an optical microscope and spatial structures created by AFM.
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The graphene structures suitable for field effect transistors
Kurfürstová, Markéta ; Bartošík, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor’s thesis is focused on preparation of graphene structures suitable for field effect transistors. In the first section, graphene is characterized in terms of its properties and prepataion methods. The second part sums up semiconductor technology, focusing on transistors with graphene layer. Next, electron beam litography method is presented, which had been used for preparation of the structures. Finally, an experimental procedure of graphene structures manufacture is described.
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The apparatus for measuring optimal inclination of photovoltaic panels
KRČKA, Pavel
This Bachelor Thesis deals with the topic of transfer of solar radiation into electric energy in photovoltaic systems. At the beginning the problems of mining and combustion of fossil fuel are highlighted. After that the dispositions (possibilities) of the solar radiation that might be effectively used in photovoltaic systems are described. There is also the photoelectric effect, on which the function of various photovoltaic cell types representing the basic constructional elements of each photovoltaic panel described here in detail. The main part of the text is then focused on development of a tool capable of measuring the optimum angle and position of photovoltaic panels, at which the photovoltaic panels should have the maximum energetic yield during a day in a specific season of a year.
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Příprava a vlastnosti heterostruktur GaInP.sub.2./sub./GaAs
Nohavica, Dušan ; Gladkov, Petar ; Žďánský, Karel
Growth of the Ga.sub.x./sub.In.sub.1-x./sub.P/GaAs(100) heterostructures from the liquid phase was optimized at 800.sup.o./sup.C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects has been suggested.
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