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Organic materials for molecular quantum bits: deposition and chemical and morphological analysis
Komora, Mojmír ; Mach, Jindřich (referee) ; Čechal, Jan (advisor)
This bachelor thesis deals with an experimental preparation and analysis of ultra thin films of iron phtalocyanines on silicon substrates with goal to describe parameters of films prepared under different conditions, e.g deposition time or substrate temperature. Preparation of samples was done using MBE method under conditions of ultrahigh vacuum in vacuum chamber. Analysis of chemical composition and morfology of prepared films was done with methods of X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy and Atomic Force Microscopy, respectively.
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Optical characterization of InAs nanowires
Hošková, Michaela ; Ligmajer, Filip (referee) ; Musálek, Tomáš (advisor)
This bachelor thesis deals with the fabrication and optical characterization of InAs nanowires. Physical vapor deposition is used for the fabrication of nanowires via method selective epitaxy in the MBE chamber. The growth conditions for the formation of nanowires are optimized and their dimensions are characterized by a scanning electron microscope. Confocal spectroscopy and electron energy loss spectroscopy are employed for measurement of the optical response and the influence of the geometry of individual nanowires is studied. The motivation is the development of a new optical method that monitors nanowires directly during growth in the MBE apparatus.
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Preparation of SiN ultrathin films
Dvořák, Martin ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
This bachelor´s thesis deals with design, testing and calibration of an effussion cell generating silicon atomic beam having thermal energy (0,1 - 1 eV). These beams are used for the preparation of Si and SiN ultrathin films. Silicon nitride and its applications in semiconductor industry are reviewed. First experiments with deposition of ultrathin films of Si and SiN are described. These layers have been analyzed by x-ray photoelectron spektroscopy (XPS) and atomic force microscopy (AFM).
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Preparation of Ag/Co/Ag Trilayers
Burda, Pavel ; Kolíbal, Miroslav (referee) ; Čechal, Jan (advisor)
The Bachelor's thesis is aimed to the preparation of silver and cobalt ultrathin films. The films are formed on modified surfaces of crystalline silicon substrates (SiO2/Si(111), Si(111) ?H, Si(111) 7×7) and amorphous SiO2 in a form of a quartz glass. Thin films are grown using an effusion cell for Molecular Beam Epitaxy (MBE). Surface modified surfaces are covered subsequently by a silver, cobalt and silver thin layer. The individual film thickness is 6 nm. Consequently the samples are studied by the X-ray Photoelectron Spectroscopy (XPS) and the Atomic Force Microscopy (AFM). The morphology of thin films and growth modes are compared among the substrates. Growth modes change with the surface modification type. Complete trilayer system Ag/Co/Ag was prepared on SiO2/Si(111) and Si(111) 7×7. Such system can be employed in plasmonics in order to allow the control of surface plasmon polariton properties by an external magnetic field.
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Preparation of low-dimensional III-V semiconductors
Stanislav, Silvestr ; Detz, Hermann (referee) ; Kolíbal, Miroslav (advisor)
Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Deposition of Ga and GaN ultrathin layers on graphene substrate
Dvořák, Martin ; Nebojsa, Alois (referee) ; Mach, Jindřich (advisor)
This diploma thesis deals with preparation of graphene samples for depositions of ultrathin layers of gallium and gallium nitride. Graphene substrates were prepared by chemical vapour deposition in home-build high temperature reactor. After graphene transfer to silicon wafers, a series of chemical and thermal treatments were performed. Obtained samples were suitable for the study of growth of ultrathin layers of Ga and GaN. The growth of Ga and GaN was realized in ultra high vacuum conditions. Molecular beam epitaxy technique was used for gallium depositions together with ion source for nitridation. Obtained ultrathin layers were studied with X-ray photoelectron spectroscopy, atomic force microscopy and with scanning electron microscopy.
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Growth ultrathin of layers Au
Beránek, Jiří ; Kolíbal, Miroslav (referee) ; Mach, Jindřich (advisor)
The aim of this thesis is to study growth of ultrathin gold layers prepared by MBE (Molecular beam epitaxy) in UHV conditions. Differently modified sillicon served as a substrate and depositions were done at different temperatures of a substrate. Samples were analyzed by ToF LEIS for thickness, morfology was examined by SEM and AFM. X-ray photoelectron spectra were taken for chemical analysis. Gathered data together with their evaluation contribute to description and understanding of some processes during deposition and subsequent exposure of the sample to high temperatures. Experimental data and conslusions also prowide basis for further experiments and development of potential applications.
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Preparation and analysis of nanostructures in UHV conditions
Gloss, Jonáš ; Spousta, Jiří (referee) ; Mach, Jindřich (advisor)
Cílem této bakalářské práce bylo skoumání přípravy a analýzy nanostruktur v podmínkách vysokého vakua (VV). Teoretická část klade důraz na gallium nitridové (GaN) nanostruktury. Ty pak byly analyzovány rastrovacím tunelovacím mikroskopem (RTM). Aby bylo možné analyzovat připravené vzorky ve VV RTM, bylo provedeno elektrochemické leptání wolfrámového drátu. Tato práce zhrnuje postup k vytvoření wolfrámových hrotů pro RTM. Kapitola o výrobě wolfrámových hrotů zahrnuje popis princípu elektrochemického leptání. Obrázky vyleptaných hrotů byly provedeny pomocí rastrovacího elektronového mikroskopu. Zaostřování hrotů pak bylo vykonáno fokusovaným iontovým svazkem. V této práci je také představena metoda pro opětovné ostření RTM hrotů elektronovým svazkem, vykonávaná in-situ. Bylo dokázáno, že je možné rutinně obdržet wolfrámové hroty s poloměrem křivosti rádovo v nanometrech.
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Optimization of the radiofrequency atomic source for deposition of GaN
Kern, Michal ; Wertheimer, Pavel (referee) ; Mach, Jindřich (advisor)
This thesis is focused on construction and optimization of radiofrequency atomic dissociation source of atomic nitrogen for depostion of GaN. The theoretical part deals with atomic sources, growth of ultrathin layers and the issue of radiofrequency circuits, with emphasis on their design using Smith chart. Methods for synthesis of GaN ultrathin layers and deposition are also discussed. In the experimental part, design and realization of various congurations of the impedance matching network is described. Using the impedance matching network a nitrogen plasma discharge was successfuly created and its spectrum was analysed. Afterwards, design and realization of a stepper motor control for the impedance matching network is described.
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