|
| |
|
|
Recent developments and improvements of EOD program
Lencová, Bohumila
EOD is used for computations in particle optics that require accurate determination of 2D electrostatic and magnetic focusing, deflection and multipole fields and accurate evaluation of optical properties from aberration theory or from ray tracing. EOD not only allows these types of computations, but it is a complete workplace equipped with a user interface for editing input data for FEM, computation of paraxial trajectories and aberrations and ray-tracing, running the computations, producing graphical outputs and processing them. Extensive documentation on more than 500 pages gives both the user manual, theory behind FEM, optics and ray tracing and basic description of examples. The easy start in using the program is enabled by a series of PowerPoint presentations and a number of videos, showing the work with EOD on both simple and difficult examples. More than 30 projects with sample data allow the user to understand the work with EOD.
|
|
|
Optical and scanning electron microscopies in examination of ultrathin foils
Konvalina, Ivo ; Hovorka, Miloš ; Fořt, Tomáš ; Müllerová, Ilona
Very low energy scanning transmission electron microscopy is emerging as a novel tool for examination of ultrathin foils to learn more about the electron structure of solids. The electron micrographs provide image contrasts governed by the effective thickness of the sample proportional to the inner potential and at lowest energies the local density of electron states in the direction of impact of the electron wave starts to dominate. The optical methods are used during the sample preparation. The laser confocal microscope Olympus Lext OLS 3100 was used for preliminary observations of the 3 nm C foil prepared by magnetron sputtering in nitrogen atmosphere on a flat glass covered by a disaccharide layer.
|
|
| |
|
|
Mapping of dopants by electron injection
Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk
Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
|
|
| |
guest ::
