Original title: Mapping of dopants by electron injection
Authors: Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk
Document type: Papers
Conference/Event: International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./, Skalský dvůr (CZ), 2010-05-31 / 2010-06-04
Year: 2010
Language: eng
Abstract: Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
Keywords: mapping dopants; secondary electron emission; silicon structures; very low energy range
Project no.: CEZ:AV0Z20650511 (CEP), GP102/09/P543 (CEP), IAA100650803 (CEP)
Funding provider: GA ČR, GA AV ČR
Host item entry: Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation, ISBN 978-80-254-6842-5

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0190598

Permalink: http://www.nusl.cz/ntk/nusl-41919


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Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers