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Luminescence of quantum dot heterostructures in applied electric field
Kubištová, Jana ; Zíková, Markéta ; Kuldová, Karla ; Pangrác, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Petříček, Otto ; Oswald, Jiří
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
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Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE
Hulicius, Eduard ; Pacherová, Oliva ; Oswald, Jiří ; Hospodková, Alice ; Pangrác, Jiří ; Šimeček, Tomislav ; Melichar, Karel ; Petříček, Otto ; Chráska, T. ; Holý, V. ; Vávra, I. ; Ouattara, L.
Zjistili jsme, že strmost a symetrie na atomární úrovni je také dosažitelná s technologií MOVPE. V těchto strukturách jsme schopni nalézt pouze periodicitu, zatímco obrázky s rozlišením na atomární úrovni dávají spolehlivé údaje o tlouštce.
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