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Interaction of ultrashort laser pulses with semiconductor nanostructures
Preclíková, Jana ; Malý, Petr (advisor) ; Potůček, Zdeněk (referee) ; Oswald, Jiří (referee)
The thesis is devoted to the optical spectroscopy (photoluminescence, transmission, ultrafast photoluminescence) of nanocrystalline diamond films and silver nanoparticles in titanium dioxide matrix. We studied the influence of the laser irradiation on optical properties of both materials under various conditions. Nanocrystalline diamond exhibits strong subpicosecond and picosecond photoluminescence parameters of which (intensity and decay rate) change with the laser irradiation and ambient air pressure. The effects are accompanied by a change in optical thicknesses of the nanocrystalline diamond films. We assigned the phenomena to light induced adsorption processes which influence the subgap states originating from surface and grainboundaries atoms. We implemented and optimized the preparation technique of the nanocomposite Ag-TiO2films exhibiting the multicolour photochromic effect. The analysis of the initial stages of the photochromic transformation revealed that during the laser irradiation the plasmon frequency of the resonating silver nanoparticles was blue shifted. The photoluminescence spectroscopy confirmed an increase in number of the Ag+ ions during the photochromic transformation. The photoluminescnece of the nanocrystalline TiO2 is due to the two types of radiative transitions: the...
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Luminescence spectroscopy of two-dimensional quantum structures in GaAs/AlGaAs system
Grohoľová, Adela ; Grill, Roman (advisor) ; Oswald, Jiří (referee)
The aim of this work is the study of photoluminescence properties of GaAs/Al0.33Ga0.67As double quantum well. Low-temperature luminescence spectra of this sample are measured in dependence on electric and magnetic eld and dierent excitation power. The temperature dependencies of photoluminescence especially of the indirect excitons in in-plane magnetic eld are gauged as well. The simple model of localized indirect excitons is discussed to explain the discrepancy concerning the damping of indirect exciton photoluminescence in in-plane magnetic eld. The eective g-factors of indirect, neutral and charged excitons are calculated from observed Zeeman splitting. Few simple models are proposed to explain the behavior of eective g-factors. The possible agreement or contradiction with other published experimental data is discussed.
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Luminescence of quantum dot heterostructures in applied electric field
Kubištová, Jana ; Zíková, Markéta ; Kuldová, Karla ; Pangrác, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Petříček, Otto ; Oswald, Jiří
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
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GaAsSb strain reducing layer covering InAs/GaAs quantum dots
Zíková, Markéta ; Hospodková, Alice ; Pangrác, Jiří ; Oswald, Jiří ; Kubištová, Jana ; Hulicius, Eduard ; Komninou, Ph. ; Kioseoglou, J. ; Nikitis, F.
GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.
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