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Technolgy of materials preparation for the high sensitivity infrared detectors
Novotný, Jan ; Zelinka, Jiří ; Franc, J.
Single crystals of triglycine sulphate (TGS) doped with L-alanin, lysin and with Co.sup.2+.sup., Cd.sup.2+.sup. and PO.sub.4./sub..sup.3-.sup. were grown from aqueous solutions by means of slow cooling method. Concentration of doping elements varied from 5 to 20mol. per cent. Morphology, domain structure and P-E hysteresis loops have been investigated. TGS single crystals doped with Co.sup.2+.sup. and PO.sub.4./sub..sup.3-.sup. show the inernal fields as high as 217 kV/m with peculiarities in the hysteresis loops. The best hysteresis loop has been obtained on TGS crystal doped with Lysin and Cd.sup.2+.sup. ions.
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Tvorba mikro a nanoporů v polovodičích A.sup.3./sup. B.sup.5./sup
Nohavica, Dušan ; Gladkov, Petar ; Zelinka, Jiří ; Dvořák, Martin ; Pirov, J.
Electrochemically etched pores are accessible also in A.sup.3./sup. B.sup.5./sup. semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences.
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