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Shaped E-beam nanopatterning with proximity effect correction
Urbánek, Michal ; Kolařík, Vladimír ; Matějka, Milan ; Matějka, František ; Bok, Jan ; Mikšík, P. ; Vašina, J.
Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximity effect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and exposed patterns without PEC were compared. Finally, we compared the testing structures with PEC and without PEC, and we showed that the PEC tool works reliably for the e-beam writer BS 600.
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Calibration specimens for microscopy
Kolařík, Vladimír ; Matějka, Milan ; Matějka, František ; Krátký, Stanislav ; Urbánek, Michal ; Horáček, Miroslav ; Král, Stanislav ; Bok, Jan
Recent developments in nanotechnologies raised new issues in microscopy with nanometer and sub nanometer resolution. Together with the imaging techniques, new approaches in the metrology field are required both in the direct metrology issues and in the area of calibration of the imaging tools (microscopes). Scanning electron microscopy needs the calibration specimens for adjusting the size of the view field (correct magnification) and the shape of that field (correction of deflection field distortions). Calibration specimens have been prepared using different technologies; among them the e–beam patterning and the e–beam lithography have been proved to be appropriate and flexible tool for that task. In the past, we have reported several times our achievements in this field (e.g. [1]). Nevertheless, recent advances of the patterning tool (BS600), mainly the development of the technology zoomed exposure mode [2] and the installation of the magnetic field active cancellation system [3], pushed remarkably the technology necessary for further advances in this area. Within this contribution some theoretical, technology and practical aspects are discussed; achieved results are presented.
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Thin Metallic Layers Structured by E-beam Lithography
Horáček, Miroslav ; Kolařík, Vladimír ; Urbánek, Michal ; Matějka, František ; Matějka, Milan
The group of electron beam lithography runs the laboratory equipped with a shaped beam electron writer (BS600) and the basic technology for the lithographic process. The group is able to prepare micro and nano structures in thin layers of metals and other materials; including the characterization of the realized structures (using AFM, SEM, and CLSM). Within a few months (in the frame of the 'ALISI' project) a new e-beam writer with a better resolution will be installed; it will enable the realization of the actual structures in a better quality and the development of new structures with a very high innovation potential.
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Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope
Zobačová, Jitka ; Hüger, E. ; Urbánek, Michal ; Polčák, J. ; Frank, Luděk
The Si-C-N materials have been attracting growing interest due to their excellent physical properties. They are hard, possess a large band gap, resist harsh and high temperature environments, and exhibit interesting nanostrucrures such as turbosrtatic-carbon and nanopores. Their range of application includes anti-erosive turbines and cutting tools, opto-electronic materials, sensors and special drug delivery pharamaceutical products. Most of their interesting properties stems from carbon-nitrogen bonds. Hence, Si-C-N materials with a high content of carbon and nitrogen are of interest. Up to date, the highest carbon and nitrogen content could be synthesised in SiC2N4 and Si2CN4. Both chemical compositions are stable and possess the highest achieved carbon-nitrogen bond. Two different nitride bonding configuration was measured to be present.
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Proximity effect simulation for variable shape e-beam writer
Kolařík, Vladimír ; Matějka, Milan ; Urbánek, Michal ; Král, Stanislav ; Krátký, Stanislav ; Mikšík, P. ; Vašina, J.
Electron Beam Writer (EBW) is a lithographic tool allowing generation of patterns in high resolution. The writing is carried out into a layer of a sensitive material (resist), which is deposited on the substrate surface (e.g. silicon). The resolution of the EBW is limited not only by the beam spot size, but also by the electron scattering effects (forward scattering, backscattering). Thus, even if the beam spot size on the resist surface is very small, due to electron scattering effect in the resist, the exposed area is significantly broader than the original beam spot size [1, 2].
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What is the buzz about the TZ mode
Kolařík, Vladimír ; Matějka, František ; Matějka, Milan ; Horáček, Miroslav ; Urbánek, Michal ; Bok, Jan ; Krátký, Stanislav ; Král, Stanislav ; Mika, Filip
This contribution deals with an e-beam pattern generator BS 600 that works with a variable rectangular spot of electrons (stamp). The TZ stands for the ‘technology zoom’; its meaning is a reduction of the spot size by a factor of 3. Original description of the TZ exposure mode can be found in (1), [2] and [3]; further aspects concerning the exposure system and its electron source were described in [4] and [5]; technology and related topics are discussed in [6], [7], [8] and [9]; overview of application areas is in [10], [11] and [12]; and finally, very recent results are summarized in [13], [14] and [15].
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Postavení místních poplatků a daně z nemovitostí v rozpočtech obcí v ČR
Urbánek, Martin ; Peková, Jitka (vedoucí práce) ; Pucandlová, Miroslava (oponent)
Stěžejním přínosem této diplomové práce je zhodnocení postavení jednotlivých místních poplatků a daně z nemovitostí v rozpočtech obcí ČR. Práce nejprve hodnotí daňovou autonomii českých obcí v rámci mezinárodního srovnání a poté se zabývá otázkami, do jaké míry obce svých daňových pravomocí využívají. Obce jsou pro účely této práce rozděleny do velikostních kategorií 0 -- 500, 501 -- 2 000, 2001 -- 5 000, 5001 -- 10 000, 10 001 -- 20 000 a 20 001 -- 50 000 obyvatel. Jedním ze závěrů diplomové práce je zjištění vysoké míry averze obcí k místnímu zdanění. Obce nechtějí zvyšovat svou odpovědnost za daňový výnos nikoliv z ekonomického, ale především z politického důvodu. Volení zástupci obcí vnímají rozšiřování svých daňových pravomocí v rozporu s cílem znovuzvolení. Trvají na odpovědnosti centrální úrovně za zdanění a administrativní zabezpečení správy daně. Tento postoj lze pozorovat napříč všemi sledovanými velikostními kategoriemi obcí. Metodami diplomové práce jsou dotazníkové šetření, do kterého se zapojili starostové náhodně zvolených obcí, analýza vybraných daňových příjmů a následná komparace dat mezi jednotlivými velikostními kategoriemi obcí.
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Scanning Probe Microscopy: Measuring on Hard Surfaces
Matějka, Milan ; Urbánek, Michal ; Kolařík, Vladimír
During a measurement by scanning probe microscopy (SPM) an image artifacts can appear in a measurement data. The source of image artifacts during an SPM measurement could be in parts of the SPM tool: mechanical system, piezoelectric crystal, scanner electronic. However, the main source of image artifact is the probe tip geometry and properties of the sample. For example, probe wearing, which occurs during the contact measurement on a sample with a hard surface, could result in heavy probe shape change, causing probe-related image artifacts. Measurement could appear problematic on a sample with periodical relief structure (e.g. gratings with sub 10 μm periodicity) prepared in hard materials (e.g. silicon), when the structure height is greater than about 500 nm. In this case, probe can easily get struck during the scanning, on the hard surface as well as at the high aspect ratio relief structure, causing image artifact thus reducing measurement quality.
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SPM Nanoscratching in the Sub 100 nm Resolution
Urbánek, Michal ; Kolařík, Vladimír ; Matějka, Milan
Scanning probe microscopy (SPM) is tool basically used for surface characterization. Besides that, it offers several lithographic methods (e.g. nanoscratching) to prepare structures in the sub 100 nm resolution. The nanoscratching using SPM offers a method for patterning of surface with a very high resolution based on near field interaction. By this method some tiny marks or taggants could be prepared. Therefore we used the SPM nanoscratching for preparation of nanostructures in thin soft polymer films by various tips. Nanoscratching regime of SPM is possible to operate in contact and close contact modes. In the contact mode we prepared an array of stamps with a variable size, where dimensions and depth dependency on number of pixels were inspected. For writing of these structures we used polymer films with different softness (e.g. PMMA, SU-8) and various values of setpoint, which are responsible for structures deepness.
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