Název: Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope
Autoři: Zobačová, Jitka ; Hüger, E. ; Urbánek, Michal ; Polčák, J. ; Frank, Luděk
Typ dokumentu: Příspěvky z konference
Konference/Akce: Physics at Nanoscale. IUVSTA International Summer School /10./, Devět skal (CZ), 2012-05-30 / 2012-06-04
Rok: 2012
Jazyk: eng
Abstrakt: The Si-C-N materials have been attracting growing interest due to their excellent physical properties. They are hard, possess a large band gap, resist harsh and high temperature environments, and exhibit interesting nanostrucrures such as turbosrtatic-carbon and nanopores. Their range of application includes anti-erosive turbines and cutting tools, opto-electronic materials, sensors and special drug delivery pharamaceutical products. Most of their interesting properties stems from carbon-nitrogen bonds. Hence, Si-C-N materials with a high content of carbon and nitrogen are of interest. Up to date, the highest carbon and nitrogen content could be synthesised in SiC2N4 and Si2CN4. Both chemical compositions are stable and possess the highest achieved carbon-nitrogen bond. Two different nitride bonding configuration was measured to be present.
Klíčová slova: scanning low energy electron microscope; SiCN thin films; sillicon substrate
Zdrojový dokument: Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School ), ISBN 978-80-260-0619-0

Instituce: Ústav přístrojové techniky AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: http://hdl.handle.net/11104/0215745

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-136011


Záznam je zařazen do těchto sbírek:
Věda a výzkum > AV ČR > Ústav přístrojové techniky
Konferenční materiály > Příspěvky z konference