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Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope
Zobačová, Jitka ; Hüger, E. ; Urbánek, Michal ; Polčák, J. ; Frank, Luděk
The Si-C-N materials have been attracting growing interest due to their excellent physical properties. They are hard, possess a large band gap, resist harsh and high temperature environments, and exhibit interesting nanostrucrures such as turbosrtatic-carbon and nanopores. Their range of application includes anti-erosive turbines and cutting tools, opto-electronic materials, sensors and special drug delivery pharamaceutical products. Most of their interesting properties stems from carbon-nitrogen bonds. Hence, Si-C-N materials with a high content of carbon and nitrogen are of interest. Up to date, the highest carbon and nitrogen content could be synthesised in SiC2N4 and Si2CN4. Both chemical compositions are stable and possess the highest achieved carbon-nitrogen bond. Two different nitride bonding configuration was measured to be present.
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Ab initio studium fázové stability kovů z prvních principů
Káňa, Tomáš ; Hüger, E. ; Šob, Mojmír
Pomocí ab initio výpočtů jsme studovali průběh totální energie podél transformační dráhy mezi strukturami hexagonální těsně uspořádanou (hcp) a kubickou plošně centrovanou (fcc) pro Al, Co, Ni, Cu a Pd. Našli jsme jednu transformační dráhu s velmi nízkou energiovou bariérou mezi oběma strukturami, konkrétně 0.010 eV/atom pro Al, 0.020 eV/atom pro Pd, 0.030 eV/atom pro Cu, 0.033 eV/atom pro Ni a 0.050 eV/atom pro Co.
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