Original title: Metallic and semiconductor nanoparticles integrated into thin layers of hydrogenated amorphous silicon or silicon carbide
Authors: Stuchlík, Jiří ; Kupčík, Jaroslav ; Čermák, Jan ; Stuchlíková, The-Ha ; Remeš, Zdeněk
Document type: Papers
Conference/Event: International Conference on Nanomaterials - Research & Application /16./ NANOCON 2024, Brno (CZ), 20241016
Year: 2025
Language: eng
Abstract: The combination of PECVD - plasma enhanced chemical vapor deposition and VE - vacuum evaporation at one vacuum chamber is in situ method how to integrate semiconductor (Ge) and metallic (Sn) nanoparticles into amorphous hydrogenated thin films and their structures on the base of a-Si:H or a-SiC:H. In this work we focus our effort to deposit a-SiC:H thin films from monomethylsilane (MMS = SiH3-CH3) diluted by hydrogen in the ratio 2/100 sccm. The Ge evaporates at vacuum higher than 2E-5 Pa. The TEM - transmission electron microscopy and AFM - atomic force microscopy are used for microscopical characterization of thin films while PDS - photothermal deflection spectroscopy and PL – photoluminescence spectroscopy are used for their spectroscopical characterization.
Keywords: a-SiC:H; Ge; MMS; nanoparticles; Sn
Project no.: 8X23025, SAV-23-13 (CEP), GC24-10607J (CEP)
Funding provider: GA MŠk, AV ČR, GA ČR
Host item entry: NANOCON 2024 - Conference Proceedings, ISBN 978-80-88365-24-2, ISSN 2694-930X

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: https://hdl.handle.net/11104/0366012

Permalink: http://www.nusl.cz/ntk/nusl-678844


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Research > Institutes ASCR > Institute of Physics
Conference materials > Papers