Název: Metallic and semiconductor nanoparticles integrated into thin layers of hydrogenated amorphous silicon or silicon carbide
Autoři: Stuchlík, Jiří ; Kupčík, Jaroslav ; Čermák, Jan ; Stuchlíková, The-Ha ; Remeš, Zdeněk
Typ dokumentu: Příspěvky z konference
Konference/Akce: International Conference on Nanomaterials - Research & Application /16./ NANOCON 2024, Brno (CZ), 20241016
Rok: 2025
Jazyk: eng
Abstrakt: The combination of PECVD - plasma enhanced chemical vapor deposition and VE - vacuum evaporation at one vacuum chamber is in situ method how to integrate semiconductor (Ge) and metallic (Sn) nanoparticles into amorphous hydrogenated thin films and their structures on the base of a-Si:H or a-SiC:H. In this work we focus our effort to deposit a-SiC:H thin films from monomethylsilane (MMS = SiH3-CH3) diluted by hydrogen in the ratio 2/100 sccm. The Ge evaporates at vacuum higher than 2E-5 Pa. The TEM - transmission electron microscopy and AFM - atomic force microscopy are used for microscopical characterization of thin films while PDS - photothermal deflection spectroscopy and PL – photoluminescence spectroscopy are used for their spectroscopical characterization.
Klíčová slova: a-SiC:H; Ge; MMS; nanoparticles; Sn
Číslo projektu: 8X23025, SAV-23-13 (CEP), GC24-10607J (CEP)
Poskytovatel projektu: GA MŠk, AV ČR, GA ČR
Zdrojový dokument: NANOCON 2024 - Conference Proceedings, ISBN 978-80-88365-24-2, ISSN 2694-930X

Instituce: Fyzikální ústav AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: https://hdl.handle.net/11104/0366012

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-678844