Original title:
Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE
Authors:
Vaněk, Tomáš ; Hubáček, Tomáš ; Hájek, František ; Dominec, Filip ; Pangrác, Jiří ; Kuldová, Karla ; Oswald, Jiří ; Hospodková, Alice Document type: Papers Conference/Event: International Conference NANOCON 2020 /12./, Brno (CZ), 20201021
Year:
2021
Language:
eng Abstract:
Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN.
Keywords:
GaN; light extraction; MOVPE; scintillator; SiNx Project no.: LO1603 (CEP) Funding provider: GA MŠk Host item entry: Proceedings of the 12th International Conference on Nanomaterials - Research & Application, ISBN 978-80-87294-98-7, ISSN 2694-930X
Institution: Institute of Physics AS ČR
(web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences. Original record: http://hdl.handle.net/11104/0319288