Název: MOVPE GaN/AlGaN HEMT nano-structures
Autoři: Hulicius, Eduard ; Kuldová, Karla ; Hospodková, Alice ; Pangrác, Jiří ; Dominec, Filip ; Humlíček, J. ; Pelant, Ivan ; Cibulka, Ondřej ; Herynková, Kateřina
Typ dokumentu: Příspěvky z konference
Konference/Akce: NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./, Brno (CZ), 20181017
Rok: 2019
Jazyk: eng
Abstrakt: GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.\n
Klíčová slova: GaN; HEMT; MOVPE
Číslo projektu: TH02010014 (CEP), LO1603 (CEP)
Poskytovatel projektu: GA TA ČR, GA MŠk
Zdrojový dokument: NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./, ISBN 978-80-87294-89-5

Instituce: Fyzikální ústav AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: http://hdl.handle.net/11104/0306581

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-409692


Záznam je zařazen do těchto sbírek:
Věda a výzkum > AV ČR > Fyzikální ústav
Konferenční materiály > Příspěvky z konference