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Original title:
Monte-Carlo simulation of proximity effect in e-beam lithography
Authors: Urbánek, Michal ; Kolařík, Vladimír ; Krátký, Stanislav ; Matějka, Milan ; Horáček, Miroslav ; Chlumská, Jana
Document type: Papers
Conference/Event: NANOCON 2013. International Conference /5./, Brno (CZ), 2013-10-16 / 2013-10-18
Year: 2013
Language: eng
Abstract: E–beam lithography is the most used pattern generation technique for academic and research prototyping. During this patterning by e–beam into resist layer, several effects occur which change the resolution of intended patterns. Proximity effect is the dominant one which causes that patterning areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state. This contribution deals with Monte Carlo simulation of proximity effect for various accelerating beam voltage (15 kV, 50 kV, 100 kV), typically used in e–beam writers. Proximity effect simulation were carried out in free software Casino and commercial software MCS Control Center, where each of electron trajectory can be simulated (modeled). The radial density of absorbed energy is calculated for PMMA resist with various settings of resist thickness and substrate material. At the end, coefficients of proximity effect function were calculated for beam energy of 15 keV, 50 keV and 100 keV which is desirable for proximity effect correction.
Keywords: e–beam lithography; Monte–Carlo; proximity effect simulation
Project no.: ED0017/01/01, EE.2.3.20.0103, TE01020233 (CEP)
Funding provider: GA MŠk, GA MŠk, GA TA ČR
Host item entry: NANOCON 2013. 5th International Conference Proceedings, ISBN 978-80-87294-44-4
Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0234836
Permalink: http://www.nusl.cz/ntk/nusl-174845
The record appears in these collections:
Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers
Authors: Urbánek, Michal ; Kolařík, Vladimír ; Krátký, Stanislav ; Matějka, Milan ; Horáček, Miroslav ; Chlumská, Jana
Document type: Papers
Conference/Event: NANOCON 2013. International Conference /5./, Brno (CZ), 2013-10-16 / 2013-10-18
Year: 2013
Language: eng
Abstract: E–beam lithography is the most used pattern generation technique for academic and research prototyping. During this patterning by e–beam into resist layer, several effects occur which change the resolution of intended patterns. Proximity effect is the dominant one which causes that patterning areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state. This contribution deals with Monte Carlo simulation of proximity effect for various accelerating beam voltage (15 kV, 50 kV, 100 kV), typically used in e–beam writers. Proximity effect simulation were carried out in free software Casino and commercial software MCS Control Center, where each of electron trajectory can be simulated (modeled). The radial density of absorbed energy is calculated for PMMA resist with various settings of resist thickness and substrate material. At the end, coefficients of proximity effect function were calculated for beam energy of 15 keV, 50 keV and 100 keV which is desirable for proximity effect correction.
Keywords: e–beam lithography; Monte–Carlo; proximity effect simulation
Project no.: ED0017/01/01, EE.2.3.20.0103, TE01020233 (CEP)
Funding provider: GA MŠk, GA MŠk, GA TA ČR
Host item entry: NANOCON 2013. 5th International Conference Proceedings, ISBN 978-80-87294-44-4
Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0234836
Permalink: http://www.nusl.cz/ntk/nusl-174845
The record appears in these collections:
Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers
Record created 2014-07-24, last modified 2021-11-24