Original title: Imaging of SiCN thin films on silicon substrate in the scanning low energy electron microscope
Authors: Zobačová, Jitka ; Hüger, E. ; Urbánek, Michal ; Polčák, J. ; Frank, Luděk
Document type: Papers
Conference/Event: Physics at Nanoscale. IUVSTA International Summer School /10./, Devět skal (CZ), 2012-05-30 / 2012-06-04
Year: 2012
Language: eng
Abstract: The Si-C-N materials have been attracting growing interest due to their excellent physical properties. They are hard, possess a large band gap, resist harsh and high temperature environments, and exhibit interesting nanostrucrures such as turbosrtatic-carbon and nanopores. Their range of application includes anti-erosive turbines and cutting tools, opto-electronic materials, sensors and special drug delivery pharamaceutical products. Most of their interesting properties stems from carbon-nitrogen bonds. Hence, Si-C-N materials with a high content of carbon and nitrogen are of interest. Up to date, the highest carbon and nitrogen content could be synthesised in SiC2N4 and Si2CN4. Both chemical compositions are stable and possess the highest achieved carbon-nitrogen bond. Two different nitride bonding configuration was measured to be present.
Keywords: scanning low energy electron microscope; SiCN thin films; sillicon substrate
Host item entry: Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School ), ISBN 978-80-260-0619-0

Institution: Institute of Scientific Instruments AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0215745

Permalink: http://www.nusl.cz/ntk/nusl-136011


The record appears in these collections:
Research > Institutes ASCR > Institute of Scientific Instruments
Conference materials > Papers