Original title: Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE
Authors: Vaněk, Tomáš ; Hubáček, Tomáš ; Hájek, František ; Dominec, Filip ; Pangrác, Jiří ; Kuldová, Karla ; Oswald, Jiří ; Hospodková, Alice
Document type: Papers
Conference/Event: International Conference NANOCON 2020 /12./, Brno (CZ), 20201021
Year: 2021
Language: eng
Abstract: Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN.
Keywords: GaN; light extraction; MOVPE; scintillator; SiNx
Project no.: LO1603 (CEP)
Funding provider: GA MŠk
Host item entry: Proceedings of the 12th International Conference on Nanomaterials - Research & Application, ISBN 978-80-87294-98-7, ISSN 2694-930X

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0319288

Permalink: http://www.nusl.cz/ntk/nusl-438581


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Research > Institutes ASCR > Institute of Physics
Conference materials > Papers