Název: Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
Autoři: Stuchlík, Jiří ; Fajgar, R. ; Remeš, Zdeněk ; Kupčík, Jaroslav ; Stuchlíková, Hana
Typ dokumentu: Příspěvky z konference
Konference/Akce: International Conference on Nanomaterials - Research and Application (NANOCON) /9./, Brno (CZ), 20171018
Rok: 2018
Jazyk: eng
Abstrakt: P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Klíčová slova: a-Si:H; nanoparticles; PIN diode; reactive laser ablation; thin films
Číslo projektu: LTC17029, KONNECT-007
Poskytovatel projektu: GA MŠk, AV ČR
Zdrojový dokument: Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application, ISBN 9788087294819

Instituce: Fyzikální ústav AV ČR (web)
Informace o dostupnosti dokumentu: Dokument je dostupný v příslušném ústavu Akademie věd ČR.
Původní záznam: http://hdl.handle.net/11104/0307161

Trvalý odkaz NUŠL: http://www.nusl.cz/ntk/nusl-410816


Záznam je zařazen do těchto sbírek:
Věda a výzkum > AV ČR > Fyzikální ústav
Konferenční materiály > Příspěvky z konference