Original title: Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application
Authors: Stuchlíková, The-Ha ; Remeš, Zdeněk ; Stuchlík, Jiří
Document type: Papers
Conference/Event: NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./, Brno (CZ), 20181017
Year: 2019
Language: eng
Abstract: The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the surface of hydrogenated silicon thin films to prepare diodes. Formation of nanoparticles was additionally stimulated by plasma treatment through a low pressure hydrogen glow discharge. The diodes based on PIN diode structures with and without the embedded Ge or Sn nanoparticles were characterized by temperature dependence of electrical conductivity, activation energy of conductivity, measurement of volt-ampere characteristics in dark and under solar illumination\n
Keywords: a-Si:H; diode structures; Ge NPs; I-V characteristics; Sn NPs
Project no.: CZ.02.1.01/0.0/0.0/16_019/0000760, EF16_019/0000760, LTC17029, GC16-10429J (CEP)
Funding provider: OP VVV - SOLID21, GA MŠk, GA MŠk, GA ČR
Host item entry: NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./, ISBN 978-80-87294-89-5

Institution: Institute of Physics AS ČR (web)
Document availability information: Fulltext is available at the institute of the Academy of Sciences.
Original record: http://hdl.handle.net/11104/0307160

Permalink: http://www.nusl.cz/ntk/nusl-410815


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